Hostname: page-component-745bb68f8f-s22k5 Total loading time: 0 Render date: 2025-02-04T18:03:40.198Z Has data issue: false hasContentIssue false
  • English
  • Français

Positron-Beam Observation of Dopant-Defect Complexes in Amorphized Silicon

Published online by Cambridge University Press:  01 January 1993

R.D. Goldberg ,
T.C. Leung ,
I.V. Mitchell  and
Peter J. Schultz
R.D. Goldberg
Affiliation:
Department of Physics, The University of Western Ontario, London,Ontario,Canada, N6A 3K7
T.C. Leung
Affiliation:
Department of Physics, The University of Western Ontario, London,Ontario,Canada, N6A 3K7
I.V. Mitchell
Affiliation:
Department of Physics, The University of Western Ontario, London,Ontario,Canada, N6A 3K7
Peter J. Schultz
Affiliation:
Department of Physics, The University of Western Ontario, London,Ontario,Canada, N6A 3K7
Get access

Abstract

The ability of positrons to probe local defect structures has been utilized to compare differences in residual damage structures in self-irradiated silicon for differing tempera¬tures of the implanted substrate. Sb-doped < 100 > silicon was self irradiated with a 600 keV beam to fluences ranging from 3 x 1014 to 1 X 1016 ions/cm2 at liquid nitrogen, room and slightly elevated (61° C) temperatures. A defect was identified near the end-of-range of the implanted ions whose concentration diminished at higher implant temperatures, but was only weakly dependent on total fluence. Comparison between Sb- and B-doped Si suggests that the defect is impurity based.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 1043
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Roorda, S., Custer, J. S., Sinke, W. C., Poate, J. M., Jacobson, D. C., Polman, A., and Spaepen, F., Nucl. Instr. and Meth. B59/60, 344 (1991).Google Scholar
[2] Hautojärvi, P. Huttunen, P., Mäkinen, J., Punkka, E., and Vehanen, A. in Defects in Electronic Materials, edited by Stavola, Michael, Pearton, S. J., and Davies, G. (Mater. Res. Soc. Proc. 104, Pittsburgh, PA, 1988) pp. 105–110.Google Scholar
[3] Roorda, S., Hakvoort, R. A., van Veen, A., Stolk, P. A., and Saris, F. W., J. Appl. Phys. 72(11), 5145 (1992).Google Scholar
[4] Thomas, P. A., Brodsky, M. H., Kaplan, D., and Lepine, D., Phys. Rev. B 18, 3059 (1978).Google Scholar
[5] Simpson, P. J., Vos, M., Mitchell, I. V., Wu, C., and Schultz, P. J., Phys. Rev. B 44, 12180 (1991).Google Scholar
[6] Schultz, P. J. and Lynn, K. G., Rev. Mod. Phys. 60, 701 (1988).Google Scholar
[7] Schultz, P. J., Jagadish, C., Ridgway, M. C., Elliman, R. G., and Williams, J. S., Phys. Rev. B 44, 9118 (1991).Google Scholar
[8] Schultz, P. J., Thompson, T. D., and Elliman, R. G., Appl. Phys. Lett. 60, 59 (1992).Google Scholar
[9] McCaffrey, John P., Microscopy Research and Technique 24, 180 (1993).Google Scholar
[10]The program "POSTRAP5" is a recent version of "POSTRAP4", described in: Aers, G. C. in Positron Beams for Solids and Surfaces, edited by Schultz, P. J., Massoumi, G. R., and Simpson, P. J. (AIP Press, New York, 1990) pp. 162–170.Google Scholar
[11] Schultz, P. J., Tandberg, E., Lynn, K. G., Neilsen, B., Jackman, T. E., Denhoff, M. W., and Aers, G. C., Phys. Rev. Lett. 61, 187 (1988).Google Scholar
[12] Perovic, D. D., Weatherly, G. C., Simpson, P. J., Schultz, P. J., Jackman, T. E., Aers, G. C., Noël, J.-P., and Houghton, D. C., Phys. Rev. B 43, 14257 (1991).Google Scholar
[13] Simpson, P. J., Schultz, P. J., Lee, S.-Tong, Chen, Samuel,and Braustein, G., J. Appl. Phys. 72, 5 (1992).Google Scholar