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Potential Role for Charged Dangling Bonds in Transient-Lesr of Light-Soaked a-Si:H

Published online by Cambridge University Press:  21 February 2011

Z. M. Saleh ,
H. Tarui ,
S. Tsuda ,
S. Nakano  and
Y. Kuwano
Z. M. Saleh
Affiliation:
Functional Materials Research Center, SANYO Electric Co., Ltd. 1–18–13 Hashiridani, Hirakata, Osaka 573 (Japan).
H. Tarui
Affiliation:
Functional Materials Research Center, SANYO Electric Co., Ltd. 1–18–13 Hashiridani, Hirakata, Osaka 573 (Japan).
S. Tsuda
Affiliation:
Functional Materials Research Center, SANYO Electric Co., Ltd. 1–18–13 Hashiridani, Hirakata, Osaka 573 (Japan).
S. Nakano
Affiliation:
Functional Materials Research Center, SANYO Electric Co., Ltd. 1–18–13 Hashiridani, Hirakata, Osaka 573 (Japan).
Y. Kuwano
Affiliation:
Functional Materials Research Center, SANYO Electric Co., Ltd. 1–18–13 Hashiridani, Hirakata, Osaka 573 (Japan).
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Abstract

Transient light-induced electron spin resonance (LESR) at 120 K, has been used to investigate deep defects in a-Si:H through changes in the lineshape. When the lineshape is deconvoluted into narrow and broad components, the narrow component is found to decrease, relative to the broad component, with increasing light-soaking time. Similar changes are not observed, however, in as-deposited or annealed films regardless of deposition and annealing conditions. An important role for charged dangling bonds is proposed to explain these changes and we suggest that intrinsic (stable) and light-induced (metastable) defects play different roles in transient-LESR and may occupy different energy distributions in the gap.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 359
Copyright
Copyright © Materials Research Society 1992

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References

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