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The Power Law Dependence of Electroluminescence Intensity on Forward Current in a-Si:H p-i-n Devices

Published online by Cambridge University Press:  16 February 2011

Keda Wang ,
Daxing Han  and
Marvin Silver
Keda Wang
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599–3244
Daxing Han
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599–3244
Marvin Silver
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599–3244
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Abstract

Both total electroluminescence intensity and spectrum have been measured as a function of applied voltage at various temperatures on p-i-n devices with i-layer thickness from 0.2 μm to 2.0 μm. At constant temperature the luminescence intensity shows a power-law dependence on forward bias current with an exponent, γ. As the temperature increases from 80 K to 300 K, γ decreases from 1.5 to 0.9 in thin (≤ 0.5 μm) samples. Thick, 2.0 μm, samples on the other hand, show γ ≈ 1 over the same temperature range. Each electroluminescence spectrum has been decomposed into two gaussian functions corresponding to the main band and the defect band luminescence, respectively. We find that the integral intensity of the high energy luminescence band versus the current obeys a power-law with exponent γ1, while the integral intensity of the low energy luminescence band versus the current obeys a power-law with exponent γ2· γ1 > γ2 for all samples at all temperatures in these Measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 861
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

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