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Precipitation of Oxygen and Intrinsic Gettering in Silicon

Published online by Cambridge University Press:  15 February 2011

W. K. TICE  and
T. Y. Tan
W. K. TICE
Affiliation:
IBM General Technology Division, Essex Junction, VT5452
T. Y. Tan
Affiliation:
IBM Research Division, Yorktown Heights, NY10598
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Abstract

In this review, dislocations introduced by prismatic punching at SiO2 precipitate sites in Czochralski silicon are shown to act as metal adsorption centers. Conditions necessary to localize SiO2 precipitate and dislocation complexes in wafer regions remote from semiconductor devices are discussed. This localization achieves an intrinsic gettering effect. The application of the intrinsic gettering mechanism to bipolar and MOS device technologies is shown to improve device performance and leakage limited yields.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 2: Symposium – Defects in Semiconductors I , 1980 , 367
Copyright
Copyright © Materials Research Society 1981

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