Hostname: page-component-77c89778f8-7drxs Total loading time: 0 Render date: 2024-07-20T11:26:59.061Z Has data issue: false hasContentIssue false
  • English
  • Français

Precipitation of Oxygen and Intrinsic Gettering in Silicon

Published online by Cambridge University Press:  15 February 2011

W. K. TICE  and
T. Y. Tan
W. K. TICE
Affiliation:
IBM General Technology Division, Essex Junction, VT5452
T. Y. Tan
Affiliation:
IBM Research Division, Yorktown Heights, NY10598
Get access

Abstract

In this review, dislocations introduced by prismatic punching at SiO2 precipitate sites in Czochralski silicon are shown to act as metal adsorption centers. Conditions necessary to localize SiO2 precipitate and dislocation complexes in wafer regions remote from semiconductor devices are discussed. This localization achieves an intrinsic gettering effect. The application of the intrinsic gettering mechanism to bipolar and MOS device technologies is shown to improve device performance and leakage limited yields.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 2: Symposium – Defects in Semiconductors I , 1980 , 367
Copyright
Copyright © Materials Research Society 1981

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Yatsurugi, Y., Akiyama, N., Endo, Y., Nozaki, T., J. Electrochem. Soc. 120, 976 (1973).Google Scholar
2. Nozaki, T., Yatsurugi, Y., Akiyama, N., J. Electrochem. Soc. 117, 1567 (1970).Google Scholar
3. DeKock, A. J. R, Philips Res. Rept. Suppl. 1, 7 (1973).Google Scholar
4. Oliver, M., thesis, Grenoble U. (1975).Google Scholar
5. Hrotowski, H. J. and Kaiser, R. H., J. Phys. Chem. Solids 9, 214 (1959).Google Scholar
6. Capper, P., Jones, A. W., Wallhouse, E. J., Wilkes, J. G., J. Appl. Phys. 48, 1646 (1977).CrossRefGoogle Scholar
7. Patel, J. R., Discuss. Faraday Soc. 38, 201 (1964).Google Scholar
8. Batavin, V. V., Soviet Physics – Crystallography 15, 100 (1970).Google Scholar
9. Kaiser, W., Phys. Rev. 105, 1751 (1957).Google Scholar
10. Kaiser, W., Frisch, H. L., Reiss, H., Phys. Rev. 112, 1546 (1958).Google Scholar
11. Shimura, F., Tsuya, H., Kawamura, T., Appl. Phys. Lett. 37, 483 (1980).Google Scholar
12. Shimura, F., Tsuya, H., Kawamura, T., J. Appl. Phys. 51, 269 (1980).Google Scholar
13. Tan, T. Y. and Tice, W. K., Phil. Mag. 34, 615 (1976).Google Scholar
14. Maher, D. M., Staudinger, A. and Patel, J. R., J. Appl. Phys. 47, 3813 (1976).Google Scholar
15. Kaiser, W. and Keck, P. H., J. Appl. Phys. 28, 882 (1957).Google Scholar
16. Seitz, F., Phys. Rev. 79, 723 (1950).Google Scholar
17. Jones, D. A. and Mitchell, E. W. J., Phil. Mag. 3, 1 (1958).Google Scholar
18. Batavin, V. V., Soviet Phys. Solid St. 8, 2478 (1967).Google Scholar
19. Hirsch, P. B. and Humphreys, F. J., Proc. R. Soc. A, 318, 45, 73 (1970).Google Scholar
20. Brown, L. M. and Stobbs, W. M., Phil. Mag. 23, 1201 (1971).Google Scholar
21. Humphreys, F. J. and Stewart, A. T., Surf. Sci. 31, 389 (1972).Google Scholar
22. Weatherby, G. C., Phil. Mag. 17, 791 (1968).Google Scholar
23. Schwuttke, G., J. Electrochem. Soc. 108, 163 (1961).Google Scholar
24. Fiermans, L. and Vennik, J., Phys. Status Solids 21, 627 (1967).Google Scholar
25. Fiermans, L. and Vennik, J., Phys. Status Solids 22, 463 (1967).CrossRefGoogle Scholar
26. Hu, S. M. and Poponick, M. P., J. Appl. Phys. 43, 2067 (1972).Google Scholar
27. Tice, W. K. and Tan, T. Y., Appl. Phys. Lett. 28, 564 (1976).Google Scholar
28. Nes, E. and Washburn, J., J. Appl. Phys. 42, 3652 (1971); 43, 2005 (1972).Google Scholar
29. Das, G., J. Appl. Phys. 44, 4459 (1973).Google Scholar
30. Tice, W. K., unpublished data (1980).Google Scholar
31. Dash, W. C., J. Appl. Phys. 27, 1193 (1956).Google Scholar
32. Cottrell, A. H., Strength of Solids (Physical Soc., London, 1948), p. 32.Google Scholar
33. Lawrence, J. E. (for example), Tran. Metall. Soc. AIME 242, 484 (1968).Google Scholar
34. Tice, W. K. and Geipel, H. J., Electrochem. Soc. Abs. 79–2, 1257 (1979);Google Scholar
Res, IBM J.. and Dev, . 24, 310 (1980).Google Scholar
35. Tan, T. Y., Gardner, E. E., Tice, W. K., Appl. Phys. Lett. 30, 175 (1977).CrossRefGoogle Scholar
36. Sylwetrowicz, W. D., Phil. Mag. 7, 1825 (1962).Google Scholar
37. Hu, S. M. and Patrick, W. J., J. Appl. Phys. 46, 1869 (1975).Google Scholar
38. Yue, J. T. and Ruiz, H. J., Electrochem. Soc. Ex. Abs. 77–1, 535 (1977).Google Scholar
39. Tan, T. Y. and Tice, W. K., Abs. Fourth Am. Conf. on Crystal Growth, p. 79 (NBS-Gaithersburg, Md., July 16–19, 1978).Google Scholar