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Preparation and Characterization of Nanostructured Silicon for Optoelectronic Applications

Published online by Cambridge University Press:  22 March 2011

Y. S. Ryu ,
A. Filios ,
Y. Paek  and
S. Ryu
Y. S. Ryu
Affiliation:
Mechanical Engineering, Farmingdale, SUNY, Farmingdale, NY 11735, U.S.A.
A. Filios
Affiliation:
Electrical Engineering, Farmingdale, SUNY, Farmingdale, NY 11735, U.S.A.
Y. Paek
Affiliation:
Materials Science & Engineering, Andong National University, Andong, Kyungbuk, Korea.
S. Ryu
Affiliation:
Materials Science & Engineering, Andong National University, Andong, Kyungbuk, Korea.
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Abstract

Silicon is by far the most successful material in the microelectronics industry enjoying a well-established fabrication and processing infrastructure. Two of the main challenges in traditional silicon electronic devices are (a) silicon’s relatively small and indirect fundamental energy band-gap, which severely limits optoelectronic applications, and (b) the absence of a suitable material to form a heterojunction barrier on silicon. Silicon based nanostructures are being explored as potential candidates to extent the applications of silicon in optoelectronics, provide for high-speed silicon quantum devices, increase the efficiency and reduce the cost in silicon photovoltaic solar cells, and facilitate cost-effective silicon sensors for biological, environmental, and other applications. Quantum size silicon nanolayers, nanowires, and nanodots embedded in oxide, nitride, and other amorphous matrices may provide an effective barrier for silicon, as well as band-gap engineering and enhanced optical transitions for solar cell and optoelectronic applications.

Keywords

nanostructureoptoelectronicthin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1305: Symposium AA – Group IV Semiconductor Nanostructures and Applications , 2011 , mrsf10-1305-aa17-60
Copyright
Copyright © Materials Research Society 2011

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