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Preparation of Oxygen Ion Conducting Doped Lanthanum Gallate Thin Films on Amorphous and Single Crystal Substrates by Pulsed Laser Deposition

Published online by Cambridge University Press:  01 February 2011

Fumiaki Mitsugi
Affiliation:
Venture Business Laboratory, Oita University, 700 Dannoharu, Oita 870–1192, Japan
Seiji Kanazawa
Affiliation:
Department of Electrical and Electronic Engineering, Oita University, 700 Dannoharu, Oita 870–1192, Japan
Toshikazu Ohkubo
Affiliation:
Department of Electrical and Electronic Engineering, Oita University, 700 Dannoharu, Oita 870–1192, Japan
Yukiharu Nomoto
Affiliation:
Department of Electrical and Electronic Engineering, Oita University, 700 Dannoharu, Oita 870–1192, Japan
Yusaku Takita
Affiliation:
Department of Applied Chemistry, Oita University, 700 Dannoharu, Oita 870–1192, Japan
Tatsumi Ishihara
Affiliation:
Department of Applied Chemistry, Kyushu University, Hakozaki 6–10–1, Fukuoka 812–8581, Japan
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Abstract

An La1-xSrxGa1-y-zMgyCozO3-(x+y+z)/2 (LSGMCO) has attracted much attention because it can be useable as an electrolyte of a solid oxide fuel cell due to its high oxide ion conductivity. We prepared LSGMCO thin films on silica glass and LaAlO3 single crystal substrates by pulsed laser deposition and evaluated their properties. LSGMCO thin films deposited at 800°C were poly-crystal and the deposition pressure affected their surface morphologies. In the case of the LaAlO3 single crystal substrate, a c-axis oriented LSGMCO thin film was obtained. DC conductivity and complex impedance of LSGMCO thin films were measured in vacuum atmosphere to investigate the effect of the crystal orientation on the oxide ion conductivity. It was revealed that resistance at a grain boundary of films is more dominant compare with the grain interior.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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References

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