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A Process Model for Reactive Ion Etching and Study of the Effects of Magnetron Enhancement

Published online by Cambridge University Press:  21 February 2011

M. Meyyappan  and
R. C. Buggeln
M. Meyyappan
Affiliation:
Scientific Research Associates, P. O. Box 1058, Glastonbury, CT 06033
R. C. Buggeln
Affiliation:
Scientific Research Associates, P. O. Box 1058, Glastonbury, CT 06033
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Abstract

Magnetron reactive ion etching has been receiving much attention since it offers low pressure, and low bias etching conditions with little damage. We have developed a process model for this process and present simulation results for boron trichloride etching of GaAs. The computed etch rates are uniform in the center with higher rates at the edges of the wafer. Flow rates and pressure can be optimized to improve uniformity. The etch rates with the aid of the magnetron are shown to be higher than the rates tor conventional reactive ion etching.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 158: Symposium B – In-Situ Patterning: Selective Area Deposition and Etching , 1989 , 395
Copyright
Copyright © Materials Research Society 1990

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References

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