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Process Optimization for the Fabrication of the Thin PtSi Schottky Barrier Diode IRCCD

Published online by Cambridge University Press:  15 February 2011

Wang-Nang Wang ,
Chia Ho  and
Jee-Ming Shiue
Wang-Nang Wang
Affiliation:
Chung Shan Institute of Science and Technology, Lung-Tan, P.O. Box 90008-17-11, Taoyuan, 325, Taiwan, Republic of China
Chia Ho
Affiliation:
Chung Shan Institute of Science and Technology, Lung-Tan, P.O. Box 90008-17-11, Taoyuan, 325, Taiwan, Republic of China
Jee-Ming Shiue
Affiliation:
Chung Shan Institute of Science and Technology, Lung-Tan, P.O. Box 90008-17-11, Taoyuan, 325, Taiwan, Republic of China
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Abstract

High quality abrupt junction PtSi thin film prepared by the MBE system with in situ precleaning and annealing was obtained. Wet etching and low energy hydrogen plasma excitation to generate H-terminated Si surface and low temperature thermal desorption were used to clean the substrate. IRCCD thus fabricated achieved the quantum efficiency 0.8%. TEM, STM/AFM, AES/ESCA, and RBS were used to monitor the fabrication processes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 299: Symposium C2 – Infrared Detectors--Materials, Processing, and Devices , 1994 , 309
Copyright
Copyright © Materials Research Society 1994

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