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Production of GaAs and InP Based Heterostructures

Published online by Cambridge University Press:  28 February 2011

H. Jorgensen ,
R. K. Schreiner  and
M. Deschler
H. Jorgensen
Affiliation:
AIXTRON GmbH, Jülicher Straße 336-338, 5100 Aachen, FRG
R. K. Schreiner
Affiliation:
AIXTRON GmbH, Jülicher Straße 336-338, 5100 Aachen, FRG
M. Deschler
Affiliation:
AIXTRON GmbH, Jülicher Straße 336-338, 5100 Aachen, FRG
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Abstract

The complete requested range of epitaxial deposition from one monolayer to tens of microns is available integrating LP-MOVPE and LP-VPE into wafer fabrication. Uniformity across 2 inch wafers for thickness, composition, and doping show a variation of less than 2 %. Electrical properties of the 1014 cm−3range and less for background doping, carrier mobilities of 210,000 cm2/Vs for AIGaAs and 190,000 cm2/Vs for GalnAs, both HEMT structures, are achieved. FWHM of 3.4 meV and 18.6 meV for 10 nm and 2 nm GaInAsP wells have been measured. GaAsP layers including a “graded” layer reveal FWHM of 15 nm. A new model for the understanding of high growth rates in the hydride system is demonstrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 145: Symposium A – III-V Heterostructures for Electronic/Photonic Devices , 1989 , 137
Copyright
Copyright © Materials Research Society 1989

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References

/1/ Hirtz, J.P., Razeghi, M., Bonnet, M., and Duchemin, J.P., in Pearsall, T.P. (ed.), GalnAsP Alloy Semiconductors, Part 2, John Wiley & Sons, Chichester, 1982, p. 61.Google Scholar
/2/ Cox, H.M., Koza, M.A., Keramidas, V.G., Young, M.S. J. Cryst. Growth, 73 (1985) 523.Google Scholar
/3/ Olsen, G.H. in Pearsall, T.P. (ed.), GalnAsP Alloy Semiconductors, Part 2, John Wiley & Sons, Chichester, 1982, p. 11.Google Scholar
/4/ Selders, J., Wachs, H.J. and Jürgensen, H. Electron. Lett., 22 (1986) 313.Google Scholar
/5/ Craford, M.G. in Progress in Solid State Chemistry, Vol. 8, Pergamon Press, Oxford, 1973, p. 137.Google Scholar
/6/ Pütz, N., Veuhoff, E., Bachem, K.H., Balk, P., Lüth, H. J. Electrochem. Soc., 128 (1981) 2202.Google Scholar
/7/ GrOter, K., Deschler, M., Jorgensen, H., Beccard, R. and Balk, P. J. Cryst. Growth, in the PressGoogle Scholar
/8/ Pauw, L.H. van der Philips Res. Repts., 13 (1958) 1.Google Scholar
/9/ Schmitz, D., Strauch, G., Knauf, J., Jürgensen, H., Heyen, M. and Wolter, K. J. Cryst. Growth, 93 (1988) 312.Google Scholar
/10/ Meyer, R., GrCitzmacher, D., Jjrgensen, H., and Balk, P. J. Cryst. Growth, 93 (1988) 285.Google Scholar
/11/ Grützmacher, D., Meyer, R., Zachau, M., Helgesen, P., Zrenner, A., Wolter, K., JOrgensen, H., Koch, F. and Balk, P. J. Cryst. Growth, 93 (1988) 382.Google Scholar
/12/ Engel, M., Grützmacher, D., Bauer, R.K., Bimberg, D. and Jürgensen, H. J. Cryst. Growth, 93 (1988) 359.Google Scholar
/13/ Gritzmacher, D., Wolter, K., Zachau, M., JLrgensen, H., Kurz, H. and Balk, P. Inst. Phys. Conf. Ser. No 91, 7 (1988) 613.Google Scholar
/14/ Heuken, M., Heime, K., personal communicationGoogle Scholar
/15/ Thijs, P.J.A., Lagemaat, J. M., Woltjer, R. Electron. Lett., 24 (1988) 226.Google Scholar
/16/ Unlu, H., Morkog, H. Solid State Techn., 3 (1988) 83.Google Scholar
/17/ Veuhoff, E., Pütz, N., Korec, J., Heyen, M., Balk, P. J. Electr. Mat., 12 (1988) 235.Google Scholar
/18/ Deschler, M., Gruter, K., Schlegel, A., Jüirgensen, H. and Balk, P. in Les Editions de Physique, Nougier, J.P., Gasquet, O. (ed.), Proc. Europ. Conf. on Solid State Device Research, Montpellier, 1988, p. 689.Google Scholar