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Properties and Orientation of Antiferroelectric Lead Zirconate Thin Films Grown by MOCVD

Published online by Cambridge University Press:  10 February 2011

Nan Chen
Affiliation:
Materials Science Division Argonne National Laboratory, Argonne, IL 6049-488
G. R. Bai
Affiliation:
Materials Science Division Argonne National Laboratory, Argonne, IL 6049-488
O. Auciello
Affiliation:
Materials Science Division Argonne National Laboratory, Argonne, IL 6049-488
R. E. Koritala
Affiliation:
Energy Technology Division Argonne National Laboratory, Argonne, IL 6049-488
M. T. Lanagan
Affiliation:
Energy Technology Division Argonne National Laboratory, Argonne, IL 6049-488
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Abstract

Single-phase polycrystalline PbZrO3 (PZ) thin films, 3000-6000 A thick, have been grown by metal-organic chemical vapor deposition (MOCVD) on (111)Pt/Ti/SiO2/Si substrates at ≍525°C. X-ray diffraction analysis indicated that the PZ films grown on (111)Pt/Ti/SiO2/Si (Pt/Tgi/Si) showed preferred pseudocubic (110) orientation. In contrast, PZ films grown on 150 A thick PbTiO3 (PT) template layers exhibited a pseudocubic (100) preferred orientation, and PZ films deposited on TiO2 template layers consisted of randomly oriented grains. The PZ films grown on Pt/Ti/Si with or without templates exhibited dielectric constants of 120-200 and loss tangents of 0.01-0.0. The PZ films with (110) orientation exhibited an electric-field-inducedtransformation from the antiferroelectric phase to the ferroelectric phase with a polarization of ≍34 µC/cm2, and the energy that was stored during switching was 7.1 J/cm3. The field needed to excite the ferroelectric state and that needed to revert to the antiferroelectric state were 50 and 250 kV/cm, respectively. Relationships between the MOCVD processing and the film microstructure and properties are discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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