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Properties of Interfaces between Superlattice Heterostructures and Uniform Alloy Materials as Realized by Impurity Induced Disordering

Published online by Cambridge University Press:  28 February 2011

R. L. Thornton ,
F. A. Ponce ,
G. B. Anderson  and
H. F. Chung
R. L. Thornton
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd., Palo Alto, CA 94304
F. A. Ponce
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd., Palo Alto, CA 94304
G. B. Anderson
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd., Palo Alto, CA 94304
H. F. Chung
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd., Palo Alto, CA 94304
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Abstract

In this paper present experimental results on the quality of AIGaAs material after high concentrations of impurities have been introduced for the purpose of impurity induced disordering. A comparison between Zn and Si diffusion is presented, and the nature of the transition region between uniform alloy and as-grown periodic structure has been characterized both experimentally and theoretically. Device implications of these observations is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 85
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1. Laidig, W. D., Holonyak, N. Jr., Camras, M. D., Hess, K., Coleman, J. J., Dapkus, P. D., and Bardeen, J., Appl. Phys. Letters, vol. 38, pp. 776, 1981.Google Scholar
2. Thornton, R. L., Burnham, R. D., Paoli, T. L., Holonyak, N. Jr., and Deppe, D. G., Applied Physics Letters, vol. 47, pp. 1239–1241, 1985.Google Scholar
3. Thornton, R. L., Mosby, W. J. and Chung, H. F., IEEE Trans. Elect. Dev. Vol 36 (19) pp 2156–2164, Oct. 1989 Google Scholar
4. Thornton, R. L., Burnham, R. D., Paoli, T. L., Holonyak, N. Jr., and Deppe, D. G., Journal of Crystal Growth, vol. 77, pp. 621–628, 1986.Google Scholar
5. Epler, J. E., Ponce, F. A., Endicott, F. J., and Paoli, T. L., J. Appl. Phys., vol. 64, pp. 3439–3444, 1988.Google Scholar