Hostname: page-component-669899f699-swprf Total loading time: 0 Render date: 2025-04-28T04:20:51.283Z Has data issue: false hasContentIssue false
  • English
  • Français

Properties of Silicon-on-Defect-Layer Material

Published online by Cambridge University Press:  21 February 2011

Jianming Li ,
K. W. Jones ,
J. H. Coleman ,
J. Yi ,
R. Wallace  and
W. A. Anderson
Jianming Li
Affiliation:
Brookhaven National Laboratory, Upton, NY 11973–5000
K. W. Jones
Affiliation:
Plasma Physics Corporation, P.O.Box 548, Locust Valley, NY 11560
J. H. Coleman
Affiliation:
University at Buffalo, State University of New York, Buffalo NY 14260–1900
J. Yi
Affiliation:
Currently at Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P.R.China.
R. Wallace
Affiliation:
Currently at Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P.R.China.
W. A. Anderson
Affiliation:
Brookhaven National Laboratory, Upton, NY 11973–5000
Get access

Abstract

A new silicon material, silicon-on-defect-layer (SODL), has been measured by secondary ion mass spectrometry (SIMS) and spreading resistivity (SR) measurements. SIMS data show that the buried defect-layer in SODL consists of silicon oxide due to the gettering of intrinsic oxygen by proton-implanted damage. Furthermore, SODL procedure makes a silicon wafer contain much fewer oxygen in surface-layer on the defect-layer, resulting in a purfied surface-layer. Measurements of SR indicate that the surface-layer of n-type silicon wafer was converted to p-type silicon after SODL procedure. A metal oxide semiconductor (MOS) device with a value of the electron mobility in the inversion mode of 714 cm2/(V s) was fabricated on SODL material. Like isolation function of a well in a complementary MOS (CMOS) device, the p-n junction in SODL material could play a role of isolation between the surface-layer and bulk. In addition, by reducing the implantation energy, SODL technology for making p-n junction, in which built-in field separates light-generated electrons and holes, is a candidate to make cheap solar cells by using low-quality low-cost silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 396: Symposium A – Ion-Solid Interactions for Materials Modification and Processing , 1995 , 745
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1 Li, Jianming, Appl. Phys. Lett. 55, 2223 (1989).Google Scholar
2 Li, Jianming, Nucl. Instrum. and Meth. in Phys. Res. B59/60, 1053 (1991).Google Scholar
3 Li, Jianming, U.S.Patent No. 5 198 371 (30 March 1993).Google Scholar
4 Sturm, J. C., Chen, C. K., Pfeiffer, L., and Hemmet, P. L. F., Proceedings of the Material Research Society Symposium, 107, Materials Research Society, Pittsburgh, 1988.Google Scholar
5 Buczkowski, A., Radzimski, Z. J., and Rozgonyi, G. A., Proceedings of the 4th Internatioinal Symposium of SOI Tech. and Devs., edited by Schmidt, D.N., Electrochem. Soc. 90, 351 (1990).Google Scholar
6 Castaing, J., Broniatowski, A., Radier, J., and Veyssiere, P., Proceedings of 13th Conference on Defects in Semiconductors, Metallurgical Soc. AIME 14a, 453 (1985).Google Scholar
7 MacDonald, C. and Galster, G., in Ion Implantation in Semiconductors, edited by Ruge, I. and Graul, J., pg. 124 (Springer-verlag, 1971).Google Scholar
8 Maekawa, T., Inoue, S., Aiura, M., and Usami, A., Semiconductor Science and Technology 3, 77 (1988).Google Scholar
9 Willander, , J. Appl. Phys. 56, 3006 (1984).Google Scholar
10 Wondrak, W. and Silber, D., Physica 129B, 322 (1985).Google Scholar
11 Ziegler, J. F., Watson, IBM T. J. Research Center 28–0, P. O. Box 218, Yorktown Heights, NY 10598.Google Scholar