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Pulsed Beams and Ion-Beam Mixing: Metal-Si and Metalmetal Structures

Published online by Cambridge University Press:  15 February 2011

J. W. Mayer ,
R. Fastow ,
G. Galvin ,
L. S. Hung ,
M. Nastasi ,
M. O. Thompson  and
L. R. Zheng
J. W. Mayer
Affiliation:
Dept. of Materials Science, Bard Hall, Cornell University, Ithaca, NY 14853
R. Fastow
Affiliation:
Dept. of Materials Science, Bard Hall, Cornell University, Ithaca, NY 14853
G. Galvin
Affiliation:
Dept. of Materials Science, Bard Hall, Cornell University, Ithaca, NY 14853
L. S. Hung
Affiliation:
Dept. of Materials Science, Bard Hall, Cornell University, Ithaca, NY 14853
M. Nastasi
Affiliation:
Dept. of Materials Science, Bard Hall, Cornell University, Ithaca, NY 14853
M. O. Thompson
Affiliation:
Dept. of Materials Science, Bard Hall, Cornell University, Ithaca, NY 14853
L. R. Zheng
Affiliation:
Dept. of Materials Science, Bard Hall, Cornell University, Ithaca, NY 14853
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Abstract

Energy deposition and heat-flow determine the temperature distributions in pulsed-beam irradiated structures. In laser irradiated Si, transient conductance measurements indicated a liquid/solid interface velocity of 2.8 m/sec during crystallization in agreement with a heat flow model. With pulsed ionbeam annealing of metal-Si structures, melting starts at the interface; epitaxial NiSi2 layers have been formed. Ion-beammixing experiments on polycrystalline and epitaxial Au-Ag bilayers show that intermixing is more pronounced in the polycrystalline structures as is the case with thermal annealing. Superlattice structures are formed in the epitaxial structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 7 , 1981 , 125
Copyright
Copyright © Materials Research Society 1982

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References

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