Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-13T07:10:20.977Z Has data issue: false hasContentIssue false
  • English
  • Français

Pulsed Laser-Induced Amorphization of Silicon Films

Published online by Cambridge University Press:  28 February 2011

T. Sameshima  and
S. Usui
T. Sameshima
Affiliation:
Sony Research Center, 174 Fujjitsuka-cho, Hodogaya-ku, Yokohama 240, Japan
S. Usui
Affiliation:
Sony Research Center, 174 Fujjitsuka-cho, Hodogaya-ku, Yokohama 240, Japan
Get access

Abstract

Amorphization of silicon films occurred through homogeneous solidification of molten silicon layers on quartz substrates induced by irradiation with a 30ns-XeCl excimer laser. The crystalline nucleation rate was obtained to be 8×1030m−3s−1. Silicon films were completely amorphized for films thinner than 18nm. Complete amorphizatoin is brought about by reduced grain size and reduced recalescence as the film thickness decreases. Recalescence was observed in situusing transient thermometry with a platinum-temperature-sensing layer when a 15nm-thick silicon film was amorphized.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 235: Symposium A – Phase Formation and Modification by Beam-Solid Interactions , 1991 , 89
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Liu, P.L., Yen, R., Bloembergen, N., and Hodgson, R.T., Appl. Phys. Lett. 34 864(1979).CrossRefGoogle Scholar
[2] Tu, R., Hodgson, R.T., Tan, T.Y., and Baglin, J.E., Phys. Rev. Lett. 42, 136(1979).Google Scholar
[3] Cullis, A.G., Webber, H.C., Chew, N.G., Poate, J.M., and Baeri, P., Phys. Rev. Lett. 49, 1356(1979).Google Scholar
[4] Campisano, S.U., Webber, D.C., Poate, J.M., Culis, A.G., and Chew, N.G., Appl. Phys. Lett. 46, 846 (1985).CrossRefGoogle Scholar
[5] Thompson, M.O., Mayer, J.W., Cullis, A.G., Webber, H.C., Chew, N.G., Poate, J.M., and Jacobson, D.C., Phys. Rev. Lett. 50, 896(1983).CrossRefGoogle Scholar
[6] Sameshima, T., Hara, M., and Usui, S., Jpn. J. Appl. Phys. Lett. 29, 548(1990).CrossRefGoogle Scholar
[7] Sameshima, T., Hara, M., Sano, N., and Usui, S., Jpn. J.App Phys. Lett. 29, 1363(1990).CrossRefGoogle Scholar
[8] Sameshima, T., and Usui, S., J. Appl. Phys. 70, 1281(1991)CrossRefGoogle Scholar
[9] Devaud, G., and Turnbull, D., Appl. Phys. Lett. 46, 844(1985).CrossRefGoogle Scholar
[10] Stiffler, S.R., Thompson, M.O., and Peercy, P.S., Mater. Res. Soc. Symp. Proc. 100, 505(1988).CrossRefGoogle Scholar
[11] Iqubal, Z., and Veprek, S., J. Phys. C15, 377(1982).Google Scholar
[12] Thompson, M.O., Mater. Res. Soc. Symp. Proc. 100. 525 (1988).CrossRefGoogle Scholar
[13] Sameshima, T., Hara, M. and Usui, S., Jpn. J. Appl. Phys. Lett. 28, 2131 (1989).CrossRefGoogle Scholar