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Pulsed-Laser Annealing of Silicon Films

Published online by Cambridge University Press:  28 February 2011

T. Sameshima
T. Sameshima*
Affiliation:
Sony Research Center, 174 Fujitsuka-cho, Hodogaya-ku, Yokohama 240, Japan.
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Abstract

Phase transition between crystalline and amorphous states was studied through 30ns-pulsed XeCl laser induced melting of silicon films. Crystallization occurs through interface controlled growth for laser energy above surface melting threshold. Grain size is smaller than lOOnm because of short melt duration (<80ns). Amorphization is observed in silicon films thinner than 40nm when the silicon films are completely melted then solidified homogeneously. The amorphized films have a large defect density (∼1020cm-3eV-1), which is remarkably reduced by hydrogen plasma treatment for 1 minute. This paper also discusses the application to fabrication of thin film transistors with a high carrier mobility (>100cm2/Vs) at a low temperature of 250°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 679
Copyright
Copyright © Materials Research Society 1993

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