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Quantification of Hydrogen and Determination of the Binding State in a-Si:H:D by Thermal Desorption Spectroscopy

Published online by Cambridge University Press:  28 February 2011

Norikuni Yabumoto ,
Yasuji Muramatsu  and
Masaharu Oshima
Norikuni Yabumoto
Affiliation:
NTT Electrical Communications Laboratories, 3-9-11 Midori-cho, Musashino-shi, Tokyo 180 Japan
Yasuji Muramatsu
Affiliation:
NTT Electrical Communications Laboratories, 3-9-11 Midori-cho, Musashino-shi, Tokyo 180 Japan
Masaharu Oshima
Affiliation:
NTT Electrical Communications Laboratories, 3-9-11 Midori-cho, Musashino-shi, Tokyo 180 Japan
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Abstract

Thermal desorption spectroscopy (TDS) is used to quantify the amount of hydrogen in hydrogenated amorphous silicon(a-Si:H) as well as to determine the binding state. It is possible to measure the quantity and binding state of hydrogen in 100–8000Å thick a-Si:H films. Hydrogen is incorporated in the 100Å thick film at a rate of about three times greater than that in the over 1000Å thick film. Hydrogen in all films is bonded to silicon with three kinds of binding states at 2.8, 3.1 and 3.3eV. a-Si:H:D is prepared from SiH4/D2 plasma in order to clarify the origin of hydrogen in the films which are usually deposited from SiH4 and diluted H2 gas. TDS spectra of H2, HD and D2 show that there is more hydrogen from SiH4 in the film in each of the binding states, than from the diluent H2.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 75: Symposium B – Photon, Beam, and Plasma Stimulated Chemical Processes at Surfaces , 1986 , 713
Copyright
Copyright © Materials Research Society 1987

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References

1. Redhead, P. A., Vacuum 12, 203 (1962).Google Scholar
2. Fang, C. J., Gruntz, K. J., Ley, L., Cardona, M., Demond, F. J., Muller, G. and Kalbitzerf, S. J Non-Crystalline Solids, 35–36, 255 (1980).Google Scholar
2. Brodsky, M. H., Frisch, M. A., Ziegler, J. F. and Lanford, W. A., Appl. Phys. Lett., 30, 561 (1977).Google Scholar
3. Gilifalco, L. A., Atomic Migration in Crystals, (Kyoritsu Shuppan, Tokyo, 1980), p. 182, in Japanese.Google Scholar
4. Otsuchi, T., Ito, M., Nakayama, Y. and Kawamura, T., Abstracts of Japanese Applied Physics Society 1985 Spring meeting, 451 (1985), in Japanese.Google Scholar