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Quantum Efficiency of Textured a-Si:H P-I-N Solar Cells After High Intensity Light-Soaking

Published online by Cambridge University Press:  21 February 2011

X. R. Li ,
S. Wagner ,
M. Bennett  and
S. J. Fonash
X. R. Li
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
M. Bennett
Affiliation:
Solarex Thin Film Division, Newtown, PA 18940
S. J. Fonash
Affiliation:
Center for Electronic Materials and Processing, The Pennsylvania State University, University Park, PA 16802
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Abstract

We studied the effect of high-intensity light-soaking on the quantum efficiency spectrum of textured a-Si:H solar cells. We report experimental results on the time, temperature, and soaking light intensity dependence of the quantum efficiency (QE) measured in short circuit. Under 3Wcm-2 of white light the QE saturates after 30 minutes. The QE decays little in the blue and strongly in the red. The higher the temperature of saturation, the smaller the decay of the QE.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 929
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1] Banerjee, A., Guha, S., Pawlikiewicz, A., Wolf, D. and Yang, J., Amer. Inst. Phys. Conf. Proc. 234, 186 (1991).Google Scholar
[2] Pawlikiewicz, A., Banerjee, A. and Guha, S., Mat. Res. Soc. Symp. Proc. 219 (1991).CrossRefGoogle Scholar
[3] Wagner, S., Xu, X., Li, X. R., Shen, D. S., Isomura, M., Bennett, M., Delahoy, A. E., Li, X., Arch, J. K., Nicque, J. -L. and Fonash, S. J., 1307, Proc. 22nd IEEE PVSC (1991).Google Scholar
[4] Yang, L., Chen, L. and Catalano, A., Amer. Inst. Phys. Conf. Proc. 234, 273 (1991).Google Scholar
[5] Tonon, T., Li, X. and Delahoy, A. E., Amer. Inst. Phys. Conf. Proc. 234, 259 (1991).Google Scholar
[6] Keppner, H., Fath, P., Fischer, D., Pellaton, N., Mettler, A., Tscharner, R. and Shah, A., Proc. 6th PVSEC (1991).Google Scholar
[7] Chen, L. and Yang, L., J. Non-Cryst. Solids, 137&138 1185 (1991).Google Scholar
[8] Li, X. R., Wagner, S., Bennett, M. and Fonash, S. J., in these proceedings.Google Scholar
[9] Kusian, W., Gunzel, E., Kruhler, W., Pfleiderer, H., Plattner, R. and Bullemer, B., Amer. Inst. Phys. Conf. Proc. 157 150 (1987).Google Scholar
[10] Malone, C. T., Nicque, J. L., Fonash, S. J. and Wronski, C. R., 1219, Proc. 22nd IEEE PVSC (1991).Google Scholar