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Radiation-induced Chemical Disorder in Covalent Materials

Published online by Cambridge University Press:  18 January 2011

Manabu Ishimaru ,
Yanwen Zhang  and
William J. Weber
Manabu Ishimaru
Affiliation:
The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
Yanwen Zhang
Affiliation:
Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN 37996, USA
William J. Weber
Affiliation:
Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN 37996, USA
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Abstract

Chemical disorder in ion-irradiated SiC and GaN has been examined by means of transmission electron microscopy. Radial distribution functions obtained by a quantitative analysis of electron diffraction intensities revealed that homonuclear bonds, which do not exist in the crystalline state, are formed in both ion-irradiated specimens. The origin of the homonuclear bonds is quite different between SiC and GaN. The constitute elements mix on the atomic-scale in amorphous SiC, while phase separation induced by irradiation is attributed to the formation of self-bonded Ga atomic pairs in amorphous/nanocrystalline GaN.

Keywords

radiation effectstransmission electron microscopy (TEM)amorphous
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1298: Symposium Q/R/T – Advanced Materials for Applications in Extreme Environments , 2011 , mrsf10-1298-r03-01
Copyright
Copyright © Materials Research Society 2011

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