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Radiation-Resistant Properties of Inp-Related Materials

Published online by Cambridge University Press:  16 February 2011

Masafumi Yamaguchi ,
Koshi Ando  and
Hidehiko Kamada
Masafumi Yamaguchi
Affiliation:
Toyota Tech. Inst., 2-12-1 Hisakata, Tempaku, Nagoya 468, Japan
Koshi Ando
Affiliation:
Tottori Univ., 4-101 Kosan, Tottori 680, Japan
Hidehiko Kamada
Affiliation:
NTT Opto. Labs., Morinosato, Atsugi, Kanagawa 243-01, Japan
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Abstract

Irradiation effects of high-energy electrons and protons, and 60Co gamma-rays on InP-related materials have been examined in comparison with those of GaAs and Si. Superior radiation-resistance of InP-related materials and their devices compared to GaAs and Si has been found by using deep-level transient spectroscopy (DLTS), photoluminescence (PL) and properties of devices such as solar cells and lightemitting devices. Moreover, minority-carrier injection enhanced annealing phenomena of radiation-induced defects in InP-related materials have also been observed even at low temperature of around 150K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 373: Symposium Y – Microstructure of Irradiated Materials , 1994 , 535
Copyright
Copyright © Materials Research Society 1995

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References

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