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Radiative Recombination between Two Dimensional Electron Gas and Photoexcited Holes in Modulation-doped AlxGa1−xN/GaN Heterostructures

Published online by Cambridge University Press:  03 September 2012

B. Shen ,
T. Someya ,
O. Moriwaki  and
Y. Arakawa
T. Someya
Affiliation:
Institute of Industrial Science and Research Center for Advanced Science and Technology, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106-8558, Japan
O. Moriwaki
Affiliation:
Institute of Industrial Science and Research Center for Advanced Science and Technology, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106-8558, Japan
Y. Arakawa
Affiliation:
Institute of Industrial Science and Research Center for Advanced Science and Technology, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106-8558, Japan
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Abstract

Photoluminescence (PL) of modulation-doped Al0.22Ga0.78N/GaN heterostructures was investigated. The PL peak related to recombination between the two-dimensional electron gases (2DEG) and photoexcited holes is located at 3.448 eV at 40 K, which is 45 meV below the free excitons (FE) emission in GaN. The peak can be observed at temperatures as high as 80 K. The intensity of the 2DEG PL peak is enhanced significantly by incorporating a thin Al0.12Ga0.88N layer into the GaN layer near the heterointerface to suppress the diffusion of photoexcited holes. The energy separation of the 2DEG peak and the GaN FE emission decreases with increasing temperature. Meanwhile, the 2DEG peak energy increases with increasing excitation intensity. These results are attributed to the screening effect of electrons on the bending of the conduction band at the heterointerface, which becomes stronger when temperature or excitation intensity is increased.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W11.53
Copyright
Copyright © Materials Research Society 1999

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