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Radiative Recombination Rates in GaN, InN, AlN and their Solid Solutions

Published online by Cambridge University Press:  15 February 2011

A. V. Dmitriev  and
A. L. Oruzheinikov
A. V. Dmitriev
Affiliation:
Department of Low Temperature Physics, Faculty of Physics, M.V.Lomonosov Moscow State University, Moscow, 119899, Russia. (7-095) 932 88 76, Dmitriev@lt.phys.msu.su
A. L. Oruzheinikov
Affiliation:
Department of Low Temperature Physics, Faculty of Physics, M.V.Lomonosov Moscow State University, Moscow, 119899, Russia. (7-095) 932 88 76, Dmitriev@lt.phys.msu.su
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Abstract

The radiative recombination rates have been calculated for the first time in the wide band gap wurtzite semiconductors GaN, InN and AIN and their solid solutions GaxAl1−xN and InxAl1−xN on the base of existing data on the energy band structure and optical absorption in these materials. We calculated the interband matrix elements for the direct optical transitions between the conductivity band and the valence one using the experimental photon energy dependence of the absorption coefficient near the band edge. In our calculations we assumed that the material parameters of the solid solutions (the interband matrix element, carrier effective masses and so on) could be obtained by a linear interpolation between their values in the alloy components. The temperature dependence of the energy gap was taken in the form proposed by Varshni. The calculations of the radiative recombination rates were performed in the wide range of temperature and alloy compositions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 69
Copyright
Copyright © Materials Research Society 1996

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References

[1] Strite, S., Lin, M. E. and Morkoç, H.: Thin Solid Films 231 (1993) 197.Google Scholar
[2] Nakamura, S. et al.: Jpn. J. Appl. Phys. 34 (1995) 1832; Appl. Phys. Lett. 67 (1995) 1866.Google Scholar
[3] Yoshida, S., Misawa, S. and Gonda, S.: J. Appl. Phys. 53 (1982) 6844.Google Scholar
[4] Dingle, R. and Sell, D. D.: Phys. Rev. B4 (1971) 1211.Google Scholar
[5] Perry, P. B. and Rutz, R. F.: Appl. Phys. Lett. 33 (1978) 319.Google Scholar
[6] Bloom, S. and Hakbeke, G.: Physica status solidi (b) 66 (1974) 161.Google Scholar
[7] Foly, C. P. and Tasley, T. M.: J. Appl. Phys. 59 (1986) 3241.Google Scholar
[8] Jones, D. and Lettington, A. H.: Solid State Commun. 11 (1972) 701.Google Scholar
[9] Rubio, A., Corkill, J. L. et al.: Phys. Rev. 48 (1993) 11810.Google Scholar
[10] Foly, C. P. and Tasley, T. M.: Phys. Rev. 33 (1986) 1430.Google Scholar
[11] Huang, M. Z. and Ching, W. Y.: J. Phys. Chem. Solids 46 (1985) 977.Google Scholar
[12] Guo, Qixin and Yoshida, A.: Jpn. J. Appl. Phys. 33 (1994) 2453.Google Scholar
[13] Tessiere, H., Perlin, P. et. al.: J. Appl. Phys. 76 (1994) 2429.Google Scholar
[14] Birman, J. L.: Phys. Rev. 114 (1959) 1490.Google Scholar
[15] Pastrnak, J. and Roskova, L.: Physica status solidi 26 (1968) 591.Google Scholar
[16] Bloom, S.: J. Phys. Chem. Solids 32 (1971) 2027.Google Scholar
[17] Varshni, Y. P.: Physica 34 (1967) 149.Google Scholar
[18] Roosbroeck, W. van and Shockley, W.: Phys. Rev. 94 (1954) 1558.Google Scholar
[19] Landsberg, P. T.: Recombination in Semiconductors, Cambridge University Press, 1991.Google Scholar
[20] Yamashita, H., Fukui, K., Misawa, S. and Yoshida, S.: J. Appl. Phys. 50 (1979) 896.Google Scholar
[21] Koide, Y., Itoh, H. et al.: J. Appl. Phys. 21 (1987) 4540.Google Scholar
[22] Phillips, J. C.: Bonds and Bands in Semiconductors, Academic, New York, 1973.Google Scholar