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Raman Scattering Characterization of Ultrathin Films of β-SiC

Published online by Cambridge University Press:  22 February 2011

Ahn Goo Choo ,
Spirit Tlali ,
Howard E. Jackson ,
J. P. Li  and
Andrew J. Stecki
Ahn Goo Choo
Affiliation:
Department of Physics, University of Cincinnati, OH 45221-0011
Spirit Tlali
Affiliation:
Department of Physics, University of Cincinnati, OH 45221-0011
Howard E. Jackson
Affiliation:
Department of Physics, University of Cincinnati, OH 45221-0011
J. P. Li
Affiliation:
Department of Electrical and Computer Engineering, University of Cincinnati, OH 45221-0030
Andrew J. Stecki
Affiliation:
Department of Electrical and Computer Engineering, University of Cincinnati, OH 45221-0030
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Abstract

Raman scattering has been used to characterize ultrathin films of β-SiC, ranging in thickness from 38 nm to 240 nm. These films were prepared on the surface of a <100> Si substrate by a carbonization process at a temperature of 1300°C. In each case, the LO phonon near 970 cm−1 and the TO phonon near 795 cm−1 are observed, indicating the formation of β-SiC crystal. The Raman linewidths and peak positions indicate evidence of nonuniform stress and disorder. The Raman intensity of the TO phonon is nearly twice the intensity of the LO phonon measured both with and without the Si substrate, which indicates that the crystal growth was not entirely confined in the <100> direction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 324: Symposium K – Diagnostic Techniques for Semiconductor Materials Processing , 1993 , 267
Copyright
Copyright © Materials Research Society 1994

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References

1. Pensl, G. and Helbig, Reinhard, Festkorperprobleme 30, 133 (1990).Google Scholar
2. Nishino, S., Powell, J. A., and Will, H. A. Appl. Phys. Lett. 42, 460 (1983).Google Scholar
3. Nishino, S., Suhara, H., Ono, H., and Matsunami, H., J. Appl. Phys. 61, 4889 (1987).Google Scholar
4. Mukaida, H., Okumura, H., Lee, J. H., Daimon, H., Sakuma, E., Misawa, S., Endo, K., and Yoshida, S., J. Appl. Phys. 62, 254 (1987).Google Scholar
5. Feng, Z. C., Mascarenhas, A. J., Choyke, W. J., Powell, J. A., J. Appl. Phys. 64, 3176 (1988).Google Scholar
6. Steckl, Andrew J. and Li, J. P., IEEE Trans. Elect. Devs. 39, 64 (1992).CrossRefGoogle Scholar
7. Patrick, L. and Choyke, W. J., Phys. Rev. 186, 775 (1969).Google Scholar
8. Cerdeira, F., Buchenauer, C. J., Pollak, F. H., and Cardona, M., Phys. Rev. B 5, 580 (1972).Google Scholar
9. Parayanthal, P. and Pollack, Fred H., Phys. Rev. Lett. 52, 1822 (1984).Google Scholar
10. Olego, D., Cardona, M., and Vogl, P., Phys. Rev. B25, 3878 (1982).Google Scholar
11. Nutt, S. R., Smith, D. J., Kim, H. J., and Davis, R. F., Appl. Phys. Lett. 50, 203 (1987).Google Scholar