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Raman Scattering Studies of Si1−xGex Layers Grown by Atmospheric Pressure Chemical Vapor Deposition

Published online by Cambridge University Press:  25 February 2011

C. H. Perry ,
Feng Lu ,
F. Namavar  and
N. L. Rowell
C. H. Perry
Affiliation:
Northeastern University, Boston, MA 02115
Feng Lu
Affiliation:
Northeastern University, Boston, MA 02115
F. Namavar
Affiliation:
Spire Corporation, Bedford, MA 01730
N. L. Rowell
Affiliation:
National Research Council, Ottawa, Canada K1A 0R6
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Abstract

Room temperature Raman spectra are reported of Si1−xGex layers on Si substrates (for 0.08≤x≤0.2). The samples were grown using atmospheric pressure chemical vapor deposition techniques. Layer thicknesses varied from 0.1 — 10μm. The relative frequency shift of the Si-Si phonon mode for the SiGe strained epilayers from an incommensurate pseudo-alloy of the same composition is used as a quantitative measure of the lattice strain. For thicknesses below a critical value the Raman data indicate that the films are highly strained and the growth is commensurate with the substrate whereas thicker films are partially or fully relaxed. Phonon lines are sensitive to the interfaces and alloy layers. The results are consistent with other characterization studies, such as TEM and X-ray rocking curve measurements, of the same samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 473
Copyright
Copyright © Materials Research Society 1993

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References

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