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Raman Scattering Study of Mixing of GaAs/AlAs Superlattices by Ion Implantation and Rapid Thermal Annealing

Published online by Cambridge University Press:  25 February 2011

D. Kirillov ,
P. Ho  and
G. A. Davis
D. Kirillov
Affiliation:
Varian Research Center, Palo Alto, CA 94303
P. Ho
Affiliation:
Varian Research Center, Palo Alto, CA 94303
G. A. Davis
Affiliation:
Varian Research Center, Palo Alto, CA 94303
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Abstract

Raman scattering was applied to study mixing of GaAs/AlAs superlattices. Different implantation ions and doses were used. The evolution from partially amorphous to completely amorphous and from partially mixed to completely mixed structures was observed. Rapid thermal annealing caused recrystallization of the damaged material. Different types of structures were obtained, depending on the implantation doses and species of ions. Completely mixed crystalline alloys could be obtained only for high implantation doses.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 69: Symposium D – Materials Characterization , 1986 , 185
Copyright
Copyright © Materials Research Society 1986

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