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Raman Scattering with Nanosecond Resolution During Pulsed Laser Heating of Silicon

Published online by Cambridge University Press:  15 February 2011

D. Von Der Linde ,
G. Wartmann  and
A. Ozols
D. Von Der Linde
Affiliation:
Universität Essen-GHS, Fachbereich Physik, 4300 Essen 1, W. Germany
G. Wartmann
Affiliation:
Universität Essen-GHS, Fachbereich Physik, 4300 Essen 1, W. Germany
A. Ozols
Affiliation:
Universität Essen-GHS, Fachbereich Physik, 4300 Essen 1, W. Germany
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Abstract

We present time-resolved measurements of spontaneous anti-Stokes and Stokes Raman scattering during pulsed laser heating of crystalline silicon. The time-evolution of the lattice temperature is determined from the measured anti-Stokes/Stokes intensity ratio. In a separate calibration experiment we measure the temperature dependence of the anti-Stokes/Stokes ratio of an oven-heated silicon crystal from 300 K up to 900 K. The phase transition occuring during laser heating is detected by monitoring the changes of the optical reflectivity during laser irradiation. Our data suggest that the phase transition occurs at a lattice temperature of ∼600 K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 17
Copyright
Copyright © Materials Research Society 1983

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Footnotes

*

Permanent address: Institute of Physics, Latvian SSR Acadenmr of Science, Riga,USSR.

References

REFERENCES

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