Hostname: page-component-7479d7b7d-rvbq7 Total loading time: 0 Render date: 2024-07-13T05:40:45.489Z Has data issue: false hasContentIssue false
  • English
  • Français

Raman Studies on Oxygen Doped GaN Grown by Molecular Beam Epitaxy

Published online by Cambridge University Press:  21 March 2011

D. Papadimitriou ,
A.J. Ptak ,
D. Korakakis ,
N.C. Giles  and
T.H. Myers
D. Papadimitriou
Affiliation:
Department of Applied Mathematics and Physical Science, National Technical University of Athens, Athens, Greece
A.J. Ptak
Affiliation:
Department of Physics, West Virginia University, Morgantown, WV 26506
D. Korakakis
Affiliation:
Department of Physics, West Virginia University, Morgantown, WV 26506
N.C. Giles
Affiliation:
Department of Physics, West Virginia University, Morgantown, WV 26506
T.H. Myers
Affiliation:
Department of Physics, West Virginia University, Morgantown, WV 26506
Get access

Abstract

High quality Ga-polarity GaN films were grown by plasma-assisted molecular beam epitaxy to study strain effects due to oxygen incorporation. Oxygen concentrations up to 2 × 1022 cm-3 were studied. Layers containing oxygen at levels above 1022 cm-3 exhibit severe cracking while oxygen concentrations less than 1021 cm-3 apparently does not introduce significant strain. Raman spectra of O2-doped films were evaluated with respect to spectra of unintentionally doped GaN films (n=4x1014 cm-3) grown under the same conditions except for the O2-flux. Analysis of the E2 (high frequency phonon mode near 570 cm-1) Raman band indicated the heaviest doped samples exhibit compressive strain. Frequency-shifts between 0.7 and 0.9 cm-1 were observed as a function of the distance from the crack edges in the heavily doped samples, implying a strain (da/a) of the order of 5x10-4.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I2.11.1
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Ptak, A.J., Holbert, L.J., Ting, L., Swartz, C.H., Moldovan, M., Giles, N.C., Myers, T.H., Lierde, P. Van, Tian, C., Hockett, R.A., and Mitha, S., Wickenden, A.E., Koleske, D.D., and Henry, R.L., Appl. Phys. Lett. 79, 2740 (2001)Google Scholar
2 Romano, L.T., Walle, C.G. Van de, Ager, J.W. III, Gotz, W., and Kern, R.S., J. Appl. Phys. 87, 7745 (2000).Google Scholar
3 Ptak, A.J., Myers, T.H., Romano, L.T., Walle, C.G. Van de, and Northrup, J.E., Appl. Phys. Lett. 78, 285 (2001).Google Scholar
4V.YDavydov, u., Averkiev, N.S., Goncharuk, I.N., Nelson, D.K., Nikitina, I.P., Polkovnikov, A.S., Smirnov, A.N., and Jacobson, M.A., J. Appl. Phys. 82, 5097 (1997).Google Scholar