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Rapid Heating of Ion-Implanted Silicon by High-Power Pulsed Microwave Radiation

Published online by Cambridge University Press:  21 February 2011

R. B. James ,
P. R. Bolton ,
R. A. Alvarez  and
W. H. Christie
R. B. James
Affiliation:
Sandia National Laboratories, Livermore, CA 94550
P. R. Bolton
Affiliation:
Lawrence Livermore National Laboratory, Livermore, CA 94550
R. A. Alvarez
Affiliation:
Lawrence Livermore National Laboratory, Livermore, CA 94550
W. H. Christie
Affiliation:
Analytical Chemistry Division, Oak Ridge National Lab, Oak Ridge, TN 37831
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Abstract

We have used 1.1-μs microwave pulses at a frequency of 2.856 GHz to rapidly heat the near-surface region of arsenic-implanted silicon. The samples were irradiated inside a WR-284 waveguide by single-pass TE10 traveling wave pulses. Post-irradiation studies show that surface melting occurs for incident pulse powers exceeding about 3 MW. Time-resolved measurements of the microwave reflectivity (R) show that there is an abrupt and large increase in R for microwave pulse powers greater than the melt threshold. Significant light emission was also observed from the test cell, which is most likely due to the relaxation of a microwave-induced plasma formed by electrical breakdown of gas. Using secondary ion mass spectrometry, we measured the depth profile of the implanted arsenic and found that the penetration of the melt front in the near-surface region is not spatially homogeneous over the silicon surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 124: Symposium M – Microwave Processing of Materials I , 1988 , 207
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1. See, for example, Pulsed Laser Processing of Semiconductors, Vol.23, edited by Wood, R. F., White, C. W. and Young, R. T. (Academic, New York, 1984).Google Scholar
2. James, R. B., Bolton, P. R., Alvarez, R. A., Valiga, R. E. and Christie, W. H., in Beam-Solid Interactions and Transient Processes, Vol.74, edited by Thompson, M. O., Picraux, S. T. and Williams, J. S. (MRS, Pittsburg, 1987), p. 153.Google Scholar
3. James, R. B., Bolton, P. R. and Alvarez, R. A., in Microwave Processing of Materials, Vol. 124, edited by M. H. Brooks, I. J. Chabinsky and W. H. Sutton, in press.Google Scholar
4. Jackson, J. D., in Classical Electrodynamics, 2nd Edition (Wiley, New York, 1975), p. 298.Google Scholar