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Rapid Thermal Annealing of Double Polysilicon Bipolar Transistors

Published online by Cambridge University Press:  25 February 2011

Evan E. Patton ,
Tadanori Yamaguchi ,
June Lee ,
Alex Tang  and
Y.-C. S. Yu
Evan E. Patton
Affiliation:
Tektronix, Inc., P.O. Box 500, Beaverton, Oregon 97077
Tadanori Yamaguchi
Affiliation:
Tektronix, Inc., P.O. Box 500, Beaverton, Oregon 97077
June Lee
Affiliation:
Tektronix, Inc., P.O. Box 500, Beaverton, Oregon 97077
Alex Tang
Affiliation:
Tektronix, Inc., P.O. Box 500, Beaverton, Oregon 97077
Y.-C. S. Yu
Affiliation:
Aspen Semiconductor, Inc., 58 Daggett Drive, San Jose, CA 95134
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Abstract

This paper reports on very shallow double rapid thermally diffused npn transistor junctions, emitter polysilicon sheet resistance, and titanium disilicide formation. A transistor with a 675Å base width fabricated using rapid thermal annealing is demonstrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 146: Symposium B – Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing , 1989 , 179
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

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