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Rapid Thermal Oxidation for Passivation of Porous Silicon

Published online by Cambridge University Press:  22 February 2011

I. BÁrsony ,
J.G.E. Klappe ,
É. Vázsonyi ,
T. Lohner  and
M. Fried
I. BÁrsony
Affiliation:
MESA Research Institute, University of Twente, P.O.Box 219, NL-7500 AE Enschede, The Netherlands Research Institute for Materials Science KFKJ-ATKI, P.O. Box 49, H-1525 Budapest, Hungary
J.G.E. Klappe
Affiliation:
MESA Research Institute, University of Twente, P.O.Box 219, NL-7500 AE Enschede, The Netherlands
É. Vázsonyi
Affiliation:
Research Institute for Materials Science KFKJ-ATKI, P.O. Box 49, H-1525 Budapest, Hungary
T. Lohner
Affiliation:
Research Institute for Materials Science KFKJ-ATKI, P.O. Box 49, H-1525 Budapest, Hungary
M. Fried
Affiliation:
Research Institute for Materials Science KFKJ-ATKI, P.O. Box 49, H-1525 Budapest, Hungary
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Abstract

Chemical and mechanical stability of porous silicon layers (PSL) is the prerequisite of any active (luminescent) or passive (e.g. porous substrate) integrated applications. In this work X-ray diffraction (XRD) was used to analyze quantitatively the strain distribution obtained in different morphology PSL that were prepared on (100) p and p+Si substrates. Tetragonal lattice constant distortion can be as high as 1.4% in highly porous “as-prepared” samples. Incoherent optical heating RTO is governed by the absorption in the oxidized specimen. PSL show vertical inhomogeneity according to interpretation of spectroscopic ellipsometry (SE) data. Oxygen incorporation during RTO is controlled by specific surface (in p+ proportional, in p inversely proportional with porosity), while the developing compressive stress depends on pore size, and decreases with porosity in both morphologies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 342: Symposium G – Rapid Thermal and Integrated Processing III , 1994 , 91
Copyright
Copyright © Materials Research Society 1994

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References

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