Hostname: page-component-cd9895bd7-gbm5v Total loading time: 0 Render date: 2024-12-26T04:05:14.992Z Has data issue: false hasContentIssue false
  • English
  • Français

The Reaction between thin Ni and Co Films and their Disilicides

Published online by Cambridge University Press:  22 February 2011

E.C. Cahoon ,
C.M. Comrie  and
R. Pretorius
E.C. Cahoon
Affiliation:
Component Vendor Assurance, IBM, Poughkeepsie, NY 12602
C.M. Comrie
Affiliation:
Department of Physics, University of Cape Town, Cape Town, South Africa
R. Pretorius
Affiliation:
Van de Graaf Group, National Accelerator Centre, Faure, South Africa
Get access

Abstract

Rutherford backscattering has been used to study metal/disilicide thin film interactions for Ni and Co. Upon heating, the metal first reacted with the disilicide to form Ni2Si and Co2Si, respectively. After complete consumption of the free metal, the monosilicide phase was found to form at temperatures between 350°C and 550°C. In the case of Co it was found that after all the metal had been converted to CoSi in this way, the reaction stopped. In the Si<>/NiSi2/Ni system, however, all the disilicide converted to NiSi, even though the thickness of the deposited metal was insufficient to account for this. For this to occur, the disilicide had to dissociate into NiSi and Si, with the excess silicon regrown epitaxially on the silicon substrate.

The stability of NiSi2 under various boundary conditions was investigated to determine the factors affecting dissociation. Partial dissociation was found to occur when the NiSi2/Ni reaction proceeded on an inert SiO2 substrate. The disilicide was stable, however, in the Si<>/NiSi/NiSi2 structure. Argon sputtering at temperature was found to induce complete dissociation of NiSi2 on single-crystal Si. We believe that the NiSi2 instability is due to the very small heat of formation from the monosilicide. In such a case, the thermodynamic driving forces are small enough that the reaction can be significantly influenced by the presence of kinetic barriers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 57
Copyright
Copyright © Materials Research Society 1984

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Ottaviani, G., Majni, G., and Canali, C., Appl. Phys. 18, 285–289 (1979).Google Scholar
2. Tu, K.N., Ottaviani, G., and Thompson, R.B., J. Appl. Phys. 53, 4406 (1982).Google Scholar
3. Gibson, J.M., Bean, J.C., Poate, J.M., and Tung, R.T., Mat. Res. Soc. Symp. Proc. 12, 101–110 (1982).Google Scholar
4. Tung, R.T., Gibson, J.M., and Poate, J.M., Appl. Phys. Lett. 42, 888–890 (1983).Google Scholar
5. Tu, K.N. and Mayer, J.W. in: Thin Films-Interdiffusions and Reactions, Poate, J.M., Tu, K.N., and Mayer, J.W., eds. (Wiley, New York 1978) pp. 376–378.Google Scholar
6. Lau, S.S., Mayer, J.W., and Tu, K.N., J. Appl. Phys. 49, 4005 (1978).Google Scholar
7. Botha, A.P., “Marker and self-diffusion studies in metal silicides using 31Si” (M.Sc. thesis, University of Stellenbosch, 1980).Google Scholar
8. d'Heurle, F., Petersson, S., Stolt, L., and Strizker, B., J. Appl. Phys. 53, 5678 (1982).Google Scholar
9. Hung, L.S. and Mayer, J.W., Thin Solid Films [submitted].Google Scholar
10. Cahoon, E.C., Comrie, C.M., and Pretorius, R., Appl. Phys. Lett. [submitted].Google Scholar
11. Pretorius, R., Harris, J.M., and Nicolet, M.A., Solid-State Electron. 21, 667 (1978).Google Scholar
12. Chabal, Y.J., Rowe, J.E., Poate, J.M., Franciosi, A., and Weaver, J.H., Phys. Rev. B 26, 2748–2758 (1982).Google Scholar
13. Cahoon, E.C., Comrie, C.M., and Pretorius, R. [unpublished].Google Scholar