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Reaction Kinetics on Diamond: Measurement of HI Atom Destruction Rates

Published online by Cambridge University Press:  22 February 2011

Stephen J. Harris  and
Anita M. Weiner
Stephen J. Harris
Affiliation:
Physical Chemistry Dept., General Motors R&D Center, Warren, MI 48090-9055
Anita M. Weiner
Affiliation:
Physical Chemistry Dept., General Motors R&D Center, Warren, MI 48090-9055
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Abstract

We describe the first measurements of reaction kinetics between diamond and a gas phase species—H atoms—involved in its formation. We develop a remarkably simple method to measure H atom concentrations and use the method to measure γd, the destruction probability of H atoms on diamond at 20 torr and 1200 K. We find γd = 0.12. This value is close to that estimated from gas phase alkane rate constants.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 334: Symposium W – Gas-Phase and Surface Chemistry in Electronic Materials Processing , 1993 , 117
Copyright
Copyright © Materials Research Society 1994

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References

[1] Tankala, K. and DebRoy, T.. Modeling of the role of atomic hydrogen in heat transfer during hot filamient assisted deposition of diamond. Journal of Applied Physics, 72:712, 1992.CrossRefGoogle Scholar
[2] Tankala, K., Mecray, M., DebRoy, T., and Yarbrough, W. A.,. Hydrogen assisted heat transfer during diamond growth using carbon and tantalum filaments. Applied Physics Letters, 60:2068, 1992.Google Scholar
[3] Cat, R. and Angus, J. C.,. Heat transport in hot filament assisted deposition of diamond films. Journal of Applied Physics, submitted.Google Scholar
[4] Wolden, C. Mitra, S. and Gleason, K. K.,. Heat transfer modelling in hot-filament chemical vapor deposition diamond reactors. Journal of Applied Physics, 72:3750, 1992.Google Scholar
[5] Celii, F. G., and Butler, J. E.,. Hydrogen atom detection in the filament-assisted diamond deposition environment. Applied Physics Letters, 54:1031, 1989.Google Scholar
[6] Hsu, W. L.,. Quantitative analyses of the gaseous composition during filamentassisted diamond growth. In Proceedings of the Electrochemistry Society, page 217, Electrochemical Society, Pennington, NJ, May 1991.Google Scholar
[7] Meier, U., Kohse-Hoinghaus, K., Schafer, L., and Klages, C.. Two-photon excited LIF determination of H atom concentrations near a heated filament in a low pressure H2 environment. Applied Optics, 29:4993, 1990.CrossRefGoogle Scholar
[8] Wood, B.J. and Wise, H.. Kinetics of hydrogen atom recombination on surfaces. Journal of Physical Chemistry, 65:1976, 1961.CrossRefGoogle Scholar
[9] Harris, S. J.,. A mechanism for diamond growth from methyl radicals. Applied Physics Letters, 56:2298, 1990.Google Scholar
[10] Harris, S. J., and Goodwin, D. G.,. Growth on the reconstructed diamond (100) surface. Journal of Physical Chemistry, 97:23, 1993.Google Scholar
[11] Belton, D. N., and Harris, S. J.,. Growth from acetylene on a diamond (110) surface. Journal of Chemical Physics, 96:2371, 1992.CrossRefGoogle Scholar