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Reactive Cluster Epitaxy: CoSi2 Nanoparticles on (111) Si

Published online by Cambridge University Press:  10 February 2011

C.G. Zimmermann ,
M. Yeadon ,
M. Kleinschmit ,
R.S. Averback  and
J.M. Gibson
C.G. Zimmermann
Affiliation:
Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana IL 61801
M. Yeadon
Affiliation:
Institute of Materials Research and Engineering, 3 Research Link, Singapore, 117602, email contact: m-yeadon@imre.org.sg
M. Kleinschmit
Affiliation:
Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana IL 61801
R.S. Averback
Affiliation:
Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana IL 61801
J.M. Gibson
Affiliation:
Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana IL 61801
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Abstract

The formation of epitaxial CoSi2 islands of nanoscopic dimensions is reported using the technique of reactive cluster deposition. Co clusters in the size range 5-50nm were synthesized by sputtering a high purity Co target inside a UHV sputtering chamber. The clusters were then deposited on the reconstructed Si (111) surface. Upon annealing the particles reacted with the Si substrate to form epitaxial CoSi2.

Our observations were made using a JEOL 200CX transmission electron microscope modified for in-situ sputtering and ultrahigh vacuum conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 619: Symposium L – Recent Developments in Oxide & Metal Epitaxy – Theory… , 2000 , 97
Copyright
Copyright © Materials Research Society 2000

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References

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