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Reactive Ion Etching of AI(Cu) Alloys
Published online by Cambridge University Press: 25 February 2011
Abstract
Reactive ion etching of Al( ≤ 4 wt.% Cu) and AI(Cu)/W films is described. Using single layer resist, 1 μm lines are demonstrated over 0.3 μm topography in the bilayer films and 0.5 um lines in the single layer layer films over planar surfaces. For Al alloys with Cu concentration in the ranges 2–4 wt.% it is found that clean etching is strongly dependent on deposition condition. A model is proposed to explain this.
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