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Recombination in Tritiated Amorphous Silicon

Published online by Cambridge University Press:  17 March 2011

Tome Kosteski ,
Franco Gaspari ,
David Hum ,
Stefan Costea ,
Stefan Zukotynski ,
Nazir P. Kherani  and
Walter T. Shmayda
Tome Kosteski
Affiliation:
Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3G4, Canada
Franco Gaspari
Affiliation:
Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3G4, Canada
David Hum
Affiliation:
Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3G4, Canada
Stefan Costea
Affiliation:
Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3G4, Canada
Stefan Zukotynski
Affiliation:
Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3G4, Canada
Nazir P. Kherani
Affiliation:
Ontario Power Technologies, Toronto, Ontario M8Z 5S4, Canada
Walter T. Shmayda
Affiliation:
Ontario Power Technologies, Toronto, Ontario M8Z 5S4, Canada
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Abstract

Tritiated amorphous silicon was used for the intrinsic layer of a p-i-n hydrogenated amorphous silicon diode. Current versus voltage measurements were carried out on the diode over time under dark and illuminated conditions. There was a decrease in the forward characteristic of the diode when measured under dark conditions and there was a decrease in photovoltaic power. These changes can be explained by the creation of dangling bonds when bonded tritium atoms decay. By annealing the diode at 125 °C, most of its photovoltaic properties could be recovered. It was also found that luminescence could be recovered in tritiated amorphous silicon by thermal annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A30.1
Copyright
Copyright © Materials Research Society 2000

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References

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