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Reducing the Saturated Defect Density- in a-Sl:H by Post-Growth Anneals

Published online by Cambridge University Press:  21 February 2011

J. H. Yoon ,
X. Xu ,
M. Kotharay  and
S. Wagner
J. H. Yoon
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
X. Xu
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
M. Kotharay
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
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Abstract

The saturated light-induced defect density Nsat in a-Si:H was studied as a function of deposition temperature and of pre-light-soaking anneals. The deposition temperature and annealing affect the microstructure, which we characterize by the Si-H and Si-H2 infrared absorption intensities. We find correlations between Nsat and the initial defect density, the Urbach energy, the hydrogen concentration and the fraction of H in SiH4 groups. Annealing before light-soaking can reduce the saturated defect density substantially.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 93
Copyright
Copyright © Materials Research Society 1991

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References

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