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Reducing the Saturated Defect Density- in a-Sl:H by Post-Growth Anneals

Published online by Cambridge University Press:  21 February 2011

J. H. Yoon ,
X. Xu ,
M. Kotharay  and
S. Wagner
J. H. Yoon
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
X. Xu
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
M. Kotharay
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
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Abstract

The saturated light-induced defect density Nsat in a-Si:H was studied as a function of deposition temperature and of pre-light-soaking anneals. The deposition temperature and annealing affect the microstructure, which we characterize by the Si-H and Si-H2 infrared absorption intensities. We find correlations between Nsat and the initial defect density, the Urbach energy, the hydrogen concentration and the fraction of H in SiH4 groups. Annealing before light-soaking can reduce the saturated defect density substantially.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 93
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. Staebler, D.L. and Wronskl, C.R. Appl. Phys. Lett. 39, 292 (1977)CrossRefGoogle Scholar
2. Pankove, J.I. and Berkeyheiser, J.E.. Appl. Phys. Lett. 37, 705 (1980)Google Scholar
3. Adler, D., Solar Cells 9 133 (1983)Google Scholar
4. Park, H.R, Liu, J.Z.. and Wagner, S., Appl. Phys. Lett. 55, 2658 (1989)Google Scholar
5. Park, H.R, Liu, J.Z., Roca i Cabarrocas, P., Maruyama, M., Isomura, M., Wagner, S., Abelson, J.R, and Finger, F., Appl. Phys. Lett. 57. 1540 (1990)Google Scholar
6. Isomura, M., Hata, N., and Wagner, S., “Temperature Dependence of Growth and Saturation of Light-induced defects in a-Sl:H”, this conferenceGoogle Scholar
7. Bhattacharya, E. and Mahan, A.H.. Appl. Phys. Lett. 52, 1587 (1988)CrossRefGoogle Scholar
8. Carlson, D.E.. Appl. Phys. 41, 305 (1986)Google Scholar
9. Gleason, K.K.. Petrlch, M.A., and Reimer, JA.. Phys. Rev. B 36, 3259 (1987)Google Scholar
10. Finger, F., Vlret, V., Shah, A.. Tang, X.M.. Weber, J., and Beyer, W., In MRS Svmp. Proc. 192 (1990) 583 CrossRefGoogle Scholar
11. Shlrafujl, J., Kuwagakl, M., Sato, T., and Inulshi, Y.. Jap. J. Appl. Phys. 22, 1278 (1984)Google Scholar
12. Yamasaki, S.. Phil. Mag. B 56. 79 (1987)Google Scholar
13. Mahan, A.H., Menna, P., and Tsu, R, AIP Proc. 22, 634 (1987)Google Scholar
14. Morel, D.L., Yan, P., and Blaker, K. in Technical Digest of First “Sunshine” Workshop on Solar Cells (Shlzuoka, Japan, Feb. 6–8. 1990) pp. 15–19 Google Scholar
15. Smith, Z.E.. Chu, V., Shepard, K.. Aljishl, S.. Slobodln, D., Kolodzey, J.. Wagner, S., and Chu, T.L.. Appl. Phys. Lett. 50, 1521 (1987)Google Scholar
16. Brodsky, M.H., Cardona, M.. and Cuomo, J.J., Phys. Rev. B 16. 3556 (1977)Google Scholar
17. Wagner, H. and Beyer, W.. Solid State Commun. 48, 585 (1983)CrossRefGoogle Scholar
18. D'Antonlo, P., Konnert, J. H.. In Tetrahedrallv Bonded Amorphous Semiconductors, ed. by Street, R.A., Blegelsen, D.K., Knights, J.C. (AIP, New York 1981) p. 117 Google Scholar
19. Biegelsen, D.K., Street, R.A., Tsai, C.C., and Knights, J.C., Phys. Rev. B 20. 4839 (1979)CrossRefGoogle Scholar
20. Kumeda, M. and Shlmizu, T., Jap. J. Appl. Phys. 19. L197 (1980)Google Scholar
21. Stutzmann, M., Jackson, W., and Tsai, C.C., Phys. Rev B 32, 23 (1985)Google Scholar
22. Street, R.A. and Winer, K.. Mat. Res. Symp. Proc. 152, 131 (1989)Google Scholar
23. Isomura, M. and Wagner, S., In Proc. Int. Meeting on Stability of Amorphous Silicon Materials and Devices (Denver, Colorado, Feb. 22–24, 1991) AIP Conf. Proc. To be publishedGoogle Scholar