Published online by Cambridge University Press: 22 February 2011
The short (UV) wavelength and the large beam cross-section of excimer lasers are expected to permit high resolution projection patterning and, for this reason, excimer laser deposition of Cu from organometallic precursors appears to be an interesting alternative for metallization in ULSI circuits. Unfortunately, the photolytic decomposition of those precursors leads to strong carbon contamination of the deposits. However, the valence state of the Cu in such deposits is unknown. In this paper, the reduction of two Cu (II) compounds, Cu(hmac)2 and Cu(hfac)2, under excimer laser irradiation in a hydrogen ambient is discussed. It is shown, with X-ray Photoelectron Spectroscopy, that, under our experimental conditions, Cu(hmac)2 is reduced to a Cu (I) compound while some of the Cu(hfac)2 appears to be reduced to the metallic state. Furthermore, reaction of the SiO2 substrate with the carbon from the Cu(hmac)2 precursor is observed.