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Reflection High-Energy Electron Diffraction Study of Arsenic Incorporation in Metalorganic Molecular Beam Epitaxy of GaAs

Published online by Cambridge University Press:  22 February 2011

H. K. Dong ,
S. C. H. Hung  and
C. W. Tu
H. K. Dong
Affiliation:
Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, CA 92093-0407
S. C. H. Hung
Affiliation:
Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, CA 92093-0407
C. W. Tu
Affiliation:
Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, CA 92093-0407
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Abstract

Metalorganic molecular beam epitaxy (MOMBE) of GaAs using triethylgallium (TEGa) and As4 has been studied by reflection high-energy electron diffraction (RHEED). The effect of varying the group-Ill flow rates and group-V beam flux on the growth rate has been investigated over a wide range of substrate temperatures. For a given arsenic flux, the GaAs growth rate first increases linearly as the TEGa flow rate increases. This linear relation extends up to a certain TEGa flow rate, where the growth rate reaches its maximum value. When the TEGa flow rate is increased above this critical value, the growth rate decreases and reaches a stabilized value. From a study of both group-Ill and group-V induced RHEED intensity oscillations, we find that the V/Ill incorporation ratio is unity at the transition point. Compared to conventional molecular beam epitaxy (MBE), MOMBE behaves differently when the V/Ill incorporation ratio is less than unity. The transition region between V/III>I and V/III<1 is gradual and no excess gallium accumulates on the surface during growth. The arseniccontrolled growth rate obtained from conventional group-V induced oscillations where excess Ga atoms are present is greater than the growth rate in the stabilization region where V/IIl<1.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 193
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCE

1. Robertson, A. Jr, Chiu, T. H., Tsang, W. T., and Cunningham, J. E., J. Appl. Phys. 64, 877 (1988).Google Scholar
2. Liang, B. W. and Tu, C. W., Appl. Phys. Lett. 57, 689(1990).Google Scholar
3. Asahi, H., Kaneko, T., Okuno, Y., and Gonda, S., Jpn. J. Appl. Phys. 32, 2786 (1993).Google Scholar
4. Houng, Y. M., Pao, Y. C., and McLeod, P. in III-V Heterostructures for Electronic/Photonic Devices, edited by Tu, C. W., Mattera, V. D., and Gossard, A. C. (Mater. Res. Soc. Proc. 145, Pittsburgh, PA, 1989) pp. 63–71.Google Scholar
5. Donnelly, V. M., Tu, C. W., Beggy, J. C., McCrary, V. R., Lamont, M. G., Harris, T. D., Baiocchi, F. A., and Farrow, R. C., Appl. Phys. Letter 52, 1065 (1988).Google Scholar
6. Sugiura, H., Iga, R., and Yamada, T., J. Cryst. Growth 120, 389 (1992).Google Scholar
7. Dong, H. K., Liang, B. W., Ho, M. C., Hung, S. and Tu, C. W., J. Crystal Growth 124, 181 (1992).Google Scholar
8. Chow, R. and Fernandez, R., in III-V Heterostructures for Electronic/Photonic Devices, edited by Tu, C. W., Mattera, V. D., and Gossard, A.C. (Mater. Res. Soc. Proc. 145, Pittsburgh, PA, 1989) pp. 13–19.Google Scholar
9. Chiu, T. H., Tsang, W. T., Cunningham, J. E., J. Appl. Phys. 62, 2302 (1987); J. Vac. Sci. Tech. B6, 642 (1988).Google Scholar
10 Kobayashi, N., Benchimol, J. L., Alexandre, F. and Gao, Y., Appl. Phys. Lett. 51, 1907 (1987).Google Scholar
11. Chang, C. E., Chin, T. P., and Tu, C. W., Rev. Sci. Instrum. 62, 655 (1991).Google Scholar
12. Chin, T. P., Liang, B. W., Hou, H. Q., Ho, M. C., Chang, C. E., and Tu, C. W., Appl. Phys. Lett. 58, 254 (1991).Google Scholar