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Reflection High-Energy Electron Diffraction Study of Arsenic Incorporation in Metalorganic Molecular Beam Epitaxy of GaAs

Published online by Cambridge University Press:  22 February 2011

H. K. Dong ,
S. C. H. Hung  and
C. W. Tu
H. K. Dong
Affiliation:
Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, CA 92093-0407
S. C. H. Hung
Affiliation:
Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, CA 92093-0407
C. W. Tu
Affiliation:
Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, CA 92093-0407
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Abstract

Metalorganic molecular beam epitaxy (MOMBE) of GaAs using triethylgallium (TEGa) and As4 has been studied by reflection high-energy electron diffraction (RHEED). The effect of varying the group-Ill flow rates and group-V beam flux on the growth rate has been investigated over a wide range of substrate temperatures. For a given arsenic flux, the GaAs growth rate first increases linearly as the TEGa flow rate increases. This linear relation extends up to a certain TEGa flow rate, where the growth rate reaches its maximum value. When the TEGa flow rate is increased above this critical value, the growth rate decreases and reaches a stabilized value. From a study of both group-Ill and group-V induced RHEED intensity oscillations, we find that the V/Ill incorporation ratio is unity at the transition point. Compared to conventional molecular beam epitaxy (MBE), MOMBE behaves differently when the V/Ill incorporation ratio is less than unity. The transition region between V/III>I and V/III<1 is gradual and no excess gallium accumulates on the surface during growth. The arseniccontrolled growth rate obtained from conventional group-V induced oscillations where excess Ga atoms are present is greater than the growth rate in the stabilization region where V/IIl<1.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 193
Copyright
Copyright © Materials Research Society 1994

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References

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