Hostname: page-component-78c5997874-t5tsf Total loading time: 0 Render date: 2024-11-01T21:14:53.040Z Has data issue: false hasContentIssue false
  • English
  • Français

Relationship between Self-Texture and Interfacial Restriction on the Epitaxy of ZNO Thinfilms I

Published online by Cambridge University Press:  25 February 2011

Norifumi Fujimira ,
Seiki Goto  and
Taichiro Ito
Norifumi Fujimira
Affiliation:
University of Osaka Prefecture, Gakuen—cho, Sakai, Osaka 593, JAPAN
Seiki Goto
Affiliation:
Graduate School, University of Osaka Prefecture
Taichiro Ito
Affiliation:
University of Osaka Prefecture, Gakuen—cho, Sakai, Osaka 593, JAPAN
Get access

Abstract

We investigated relationships between self-texture and interfacial restriction on the epitaxy of directed, bonded, thin films. Defect structures in ZnO films grown epitaxially on (0001)sapphire mere evaluated by 3—dimensional maping of k—spacing using an X—ray double crystal spectrometer. The orientation distribution and variation in lattice spacing of the films wre individually measured to elucidate the mechanism of growth. The growth mode was found to change at a film thickness of approximately 100 Å. The layer within 100Å of the interface had a small orientation distribution (1.8'), a large lattice spacing distribution, and a large cumpressive stress.The layer that was more than 100Å from the interface had a larger orientation distribution, a smaller lattice spacing distribution, and a smaller compressive stress.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 263: Symposium F – Mechanisms of Heteroepitaxial Growth , 1992 , 187
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Nishihara, T., Fujizura, N., Goto, S. and Ito, T., Trans. of the MRS-Japan 1 200 (1990)Google Scholar
2. Phillips, J.C., Bonds and Bands in Semiconductors (Academic Press New York and London 1973) P.51 Google Scholar
3. Reisman, A., Berkenblit, M., Chan, S.A., and Angilello, J., J.Electron. Mater. 2 177 (1973)Google Scholar
4. Paradis, E.L., and Shuskus, A.J., Thin Solid Films 38 131 (1976)Google Scholar
5. Ohnishi, S., Hirokawa, Y., Shiosaki, T. and Kawabata, A., Jpn.J.Appl. Phys. 12 773 (1978)Google Scholar
6. Mitsuyu, T., Ono, S., and Wasa, K., J.Appl.Phys. 51 2464 (1980)Google Scholar
7. Kasuga, M., and Mochizuki, M., J.Cryst.Growth 5A 185 (1981)Google Scholar
8. Bobb, L.C., Holloway, H., Maxwell, K.H., and Zimmerman, E., J.Appl. Phys. 32 (1966) 4687 Google Scholar
9.G.W,Cullen, Corboy, J.F., and Smith, R.T., J.Crystal Growth 21 (1975) 274 Google Scholar
10. Ito, N. and Okamato, K., J.Appl.Phys. 23 1986 (1988)Google Scholar