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Relationship Between Stress and Surface Roughness in Krypton Implanted MgO

Published online by Cambridge University Press:  21 February 2011

Laurence Gea
Affiliation:
Departement de Physique des Materiaux (URA CNRS 172), Universite Claude Bernard, LYON-I(France),
Jean-Luc Loubet
Affiliation:
Ecole Centrale de Lyon (URA CNRS 855), Ecully (France)
Roger Brenier
Affiliation:
Departement de Physique des Materiaux (URA CNRS 172), Universite Claude Bernard, LYON-I(France),
Paul Thevenard
Affiliation:
Departement de Physique des Materiaux (URA CNRS 172), Universite Claude Bernard, LYON-I(France),
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Abstract

(001) MgO single crystals were implanted with 150 keV krypton ions (Kr+) at a fluence of 5.1016 ions.cm-2 . The implanted surface, observed with an Atomic Force Microscope (AFM) exhibits striking features that can be described as undulations with a wavelength of 0.5 [μm. We correlate these features to the decrease in density and the stresses induced by the implantation damage. As a matter of fact, a model of surface instabilities provides a relationship between the wavelength of the ondulations and internal stresses. Using this model, implantation stresses are calculated to 2.2 GPa. This is in good agreement with the value of 2 GPa obtained with the help of the microindentation technique and the literature data. Some effects of an ionizing post-irradiation on stress and surface roughness are described.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

[1] Grinfeld, M. A., Dokl. Akad. Nauk SSSR 290, 13581363 (1986) [Sov. Phys. Dokl. 31(10), 831 (1986)].Google Scholar
[2] Srolovitz, D.J., Acta Metall. 37 (2), 621625 (1989).Google Scholar
[3] Nozieres, P., J. Phys. France 3, 681 (1993)Google Scholar
[4] Grilhe, J., Acta Met. 41, 909 (1993)Google Scholar
[5] see for instance LeGoues, F. K., Copel, M., Tramp, R.M., Phys. Rev. B42, 11 690 (1990)Google Scholar
[6] Bodensohn, J., Nicolai, K., Leiderer, P., Z. Phys. B, 64, 5564 (1986).Google Scholar
[7] Balibar, S., Edwards, D.O., Saam, W.F., J. Low Temp. Phys. 12, 119 (1991).Google Scholar
[8] Torii, R.H., Balibar, S., J. Low Temp. Phys. 89, 391400 (1992).Google Scholar
[9] Berrehar, J., Caroli, C., Lapersonne-Meyer, C., Schotl, M., Phys. Rev. B46, 13487 (1992).Google Scholar
[10] Villechaise, P., Thesis, Poitiers University, France (1991) and to be published.Google Scholar
[11] Primak, W., Luthra, J., Phys. Rev. 150 (1966) 551.Google Scholar
[12] Norton, M. G., Carter, C. B., Fleischer, E.L., Mayer, J. W., J. Mat. Res. 7, 3171 (1992)Google Scholar
[13] Evans, B. D., Comas, J., Malmberg, P.R., Phys. Rev. 6, 2453 (1972).Google Scholar
[14] Ziegler, J.F., Biersack, J.P., Littmark, U., The slopping and ranges of ions in solids, (Pergamon, New York, 1980).Google Scholar
[15] Gea, L., PhD Thesis, Lyon University, France (1993)Google Scholar
[16] Lawn, B.R., Fuller, E.R., J. Mat. Sc 19, 4061 (1984)Google Scholar
[17] White, C.W., McHargue, C.J., Sklad, P.S., Boatner, L.A., Farlow, G.C., Mat. Sc. Rep. 4, p.123 (1989)Google Scholar
[18] Brenier, R., Canut, B., Gea, L., Ramos, S.M.M., Thevenard, P., Nucl. Inst. Meth. Phys. Res. B80/81, 1210 (1993).Google Scholar
[19] Volkert, C.A., Polman, A., MRS Symp. Proc. 235, 3 (1992)Google Scholar
[20] Primak, W., J. Appl. Phys. 35, 1342 (1964)Google Scholar
[21] Volkert, C.A., J.Appl. Phys. 70, 3521 (1991)Google Scholar
[22] Asaro, R. J., Tiller, W.A., Metall. Trans. 3, 1789 (1972)Google Scholar
[23] Louat, N., Nature 196, 1081 (1962)Google Scholar
[24] Saada, G., Dislocation modelling of physical systems, (edited by Ashby, M. et al), Pergamon Press, Oxford(1980) p 310.Google Scholar
[25] Marcinkowski, M.J., Das, E.S.P, Int. J. Fracture 10, 81 (1974)Google Scholar
[26] Jagannadham, K., Marcinkowski, M. J., Phys. Stat. Sol. (a) 50, 293 (1978).Google Scholar
[27] Krefft, G.B., J. Vac. Sci. Technol. 14, 533 (1977)Google Scholar
[28] Boatner, L.A., Rankin, J., Romana, L. J., Thevenard, P., Gilmore, D.J., Spring Meeting of the MRS, April 1992 Google Scholar
[29] Burnett, P. J., Page, T.F., J. Mat. Sc.20, 4624 (1985)Google Scholar
[30] Gea, L.A., Thevenard, P., Brenier, R., Canut, B., Ramos, S.M.M., Beranger, M., to be publishedGoogle Scholar