Hostname: page-component-78c5997874-v9fdk Total loading time: 0 Render date: 2024-11-17T23:20:22.543Z Has data issue: false hasContentIssue false
  • English
  • Français

Reliability Study of TiN/AlCu/TiN Interconnect in Submicron Cmos Process

Published online by Cambridge University Press:  21 February 2011

Arthur T. Kuo ,
Ratan Choudhury  and
William Hata
Arthur T. Kuo
Affiliation:
R&D Department, LSI Logic Corporation, 3115 Alfred St., Santa Clara, CA 95054
Ratan Choudhury
Affiliation:
R&D Department, LSI Logic Corporation, 3115 Alfred St., Santa Clara, CA 95054
William Hata
Affiliation:
R&D Department, LSI Logic Corporation, 3115 Alfred St., Santa Clara, CA 95054
Get access

Abstract

In this paper, the effect of thin film deposition conditions on the multilayer interconnect reliability was studied. Experimental results indicated the most reliable TiN/AICu/TiN interconnect was obtained at the deposition temperature of 350 °C without any substrate bias. This observation was in close agreement with thin film characteristics such as resistivity, grain size and intermetallic formation seen for those deposition conditions. SEM pictures showed the anti-reflective coating (ARC) TiN film did successfully suppress inter-plane extrusion during electromigration test. The failure mechanism for electromigration was also revealed to be mass transport as the result of the grain boundary diffusion instead of catastrophic open failures. The stress migration studies found that TiN/AICu/TiN had superior stress migration resistance than AICu alone.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 309: Symposium M2 – Materials Reliability in Microelectronics III , 1993 , 149
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Garosshen, T.J., Stephen, T.A., and Slaoin, T.P., J. Met., 37, 55 (1985).Google Scholar
[2] Fujii, T. et al. , IEEE/VMIC Proceeding, 477 (1989).Google Scholar
[3] Park, K. et al. , MRS Proceeding, 275 (1987).Google Scholar
[4] Wittmer, M., J. Vac. Sci. Technol. A3, 1797 (1985).Google Scholar
[5] Vaidya, S. and Sinha, A., Thin Solid Films, 75, 253 (1981).CrossRefGoogle Scholar
[6] Hong, C. and Crook, D., IEEE/IRPS, 119 (1985).Google Scholar
[7] Maissel, L. and Glang, R., Handbook of Thin film Technology, (McGraw-Hill, London, 1983), Ch. 10.Google Scholar
[8] Circelli, N. & Hems, J., Soild State Technol., 2, 75 (1988).Google Scholar
[9] Eliwanger, R. and Towner, L., MRS, 283 (1987).Google Scholar
[10] Colgan, E. and Mayer, J., J. Mater. Res., 4, 815 (1989).CrossRefGoogle Scholar
[11] Ahn, K., Wittmer, M., and Ting, C., Thin Solid Films, 107, 45 (1983).Google Scholar
[12] Kageyama, M., Hashimoto, K., and Onoda, H., IEEE/IRPS, 97 (1991).Google Scholar
[13] Rosenbaum, H. and Turnbull, D., ACTA Metal, 6, 653 (1958).Google Scholar
[14] Kim, C. and Morris, J., J. Appl. Phys., 72(5), 1837 (1992).CrossRefGoogle Scholar
[15] Kuo, A. and Choudhury, R. (Private Communication).Google Scholar
[16] Gardner, D. and Flinn, P., J. Appl. Phys., 67 (4), 1831 (1990).Google Scholar
[17] Root, B. and Turner, T., IEEE/IRPS, 100(1985).Google Scholar
[18] Jones, R. and Smith, L., J. Appl. Phys., 66, 4670 (1987).Google Scholar