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Resistance Change Caused by Electrochemically Induced Carrier Injection in NiO Films.

Published online by Cambridge University Press:  12 January 2012

T. Yoda ,
K. Kinoshita ,
T. Fukuhara ,
S. Kishida ,
N. Sawai  and
K. Honda
T. Yoda
Affiliation:
Department of Information and Electronics, Graduate School of Engineering, Tottori University, 4-101 Koyama-Minami, Tottori 680-8552, Japan.
K. Kinoshita
Affiliation:
Department of Information and Electronics, Graduate School of Engineering, Tottori University, 4-101 Koyama-Minami, Tottori 680-8552, Japan. Tottori University Electronic Display Research Center, 522-2 Koyama-Kita, Tottori 680-0941, Japan.
T. Fukuhara
Affiliation:
Department of Information and Electronics, Graduate School of Engineering, Tottori University, 4-101 Koyama-Minami, Tottori 680-8552, Japan.
S. Kishida
Affiliation:
Department of Information and Electronics, Graduate School of Engineering, Tottori University, 4-101 Koyama-Minami, Tottori 680-8552, Japan. Tottori University Electronic Display Research Center, 522-2 Koyama-Kita, Tottori 680-0941, Japan.
N. Sawai
Affiliation:
Fujitsu Laboratory, 10-1 Morinosatowakamiya, Atsugi 243-0197, Japan.
K. Honda
Affiliation:
Tohoku University, 2-1-1 Aoba, Katahira, Sendai 980-8577, Japan.
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Abstract

In our previous work, low resistance state (LRS) and high resistance state (HRS) areas on a nickel-oxide (NiO) film formed by applying a voltage using conductive atomic-force microscopy (C-AFM) was observed by scanning electron microscope (SEM). Comparing the observed secondary electron image (SEI) contrast to the report about the dopant-type dependence of SEI contrast reported on silicon, it was suggested that the LRS and HRS areas are, respectively, electrochemically induced p-type Ni1-xO (x > 0) and intrinsic (stoichiometric) or ntype Ni1-xO (x ≤ 0). In this paper, we verified that resistance change caused by C-AFM is due to electrochemically induced carrier injection. Reduction effect of H2 annealing on the writing area, voltage dependence of depletion layer capacitance formed between the writing area and AFM-tip using scanning nonlinear dielectric microscopy (SNDM), and the effect of Schottky barrier formation between the writing area and thin metal layer on SEI contrast were investigated. Based on these results, it was clarified that the LRS and HRS areas are, respectively, p-type Ni1-xO (x > 0) and intrinsic (stoichiometric) or n-type Ni1-xO (x ≤ 0)

Keywords

scanning electron microscopy (SEM)scanning probe microscopy (SPM)oxide
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1406: Symposium Z – Functional Metal-Oxide Nanostructures , 2012 , mrsf11-1406-z18-03
Copyright
Copyright © Materials Research Society 2012

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References

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