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Resonant Tunneling of Holes in Si/Si1−xGex, Quantum Well Structures

Published online by Cambridge University Press:  22 February 2011

G. Schuberth ,
G. Abstreiter ,
E. Gornlk ,
F. Schäffler  and
J. -F. Luy
G. Schuberth
Affiliation:
Walter Schottky Institute, Technical University Munich, D-8046 Garching, FRG
G. Abstreiter
Affiliation:
Walter Schottky Institute, Technical University Munich, D-8046 Garching, FRG
E. Gornlk
Affiliation:
Walter Schottky Institute, Technical University Munich, D-8046 Garching, FRG
F. Schäffler
Affiliation:
Daimler-Benz AG, Forschungsinstitut Ulm, D-7900 Ulm, FRG
J. -F. Luy
Affiliation:
Daimler-Benz AG, Forschungsinstitut Ulm, D-7900 Ulm, FRG
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EXTENDED ABSTRACT: We investigated resonant tunneling of holes in Si/Si1−xGex double barrier resonant tunneling (DBRT) diodes grown by MBE [1]. The aim of this study was an unambiguous identification of the quantum states involved In the two dominating resonances (Fig. 1), which have been observed by several groups [2],[3], [4]. For this purpose we calculated the transmission probabilities as a function of the well width by means of a transfer matrix method in a one-particle model [5]. The respective effective masses of heavy-holes (hh) and light-holes (lh) in the strained SiGe layers were calculated following Refs. (6) and [7], with appropriate strain corrections added according to Ref. (8); hh/lh mixing [9] was Introduced a posteriori. The calculated resonance positions are in reasonable agreement with experiments (Fig. 2), if the resonance at lower energy is attributed to a hh channel in the well, and the second resonance to a lh channel. Since only hh states are occupied in the emitter cladding layer at the temperatures (≈1.5K) studied, hh/lh coverslon due to the loss in rotational symmetry is involved in the second resonance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 409
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

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