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A Review of Silicon-On-Insulator Formation by Oxygen Ion Implantation

Published online by Cambridge University Press:  25 February 2011

Russell F. Pinizzotto
Russell F. Pinizzotto*
Affiliation:
Materials Science Laboratory, Texas Instruments Incorporated, P.O.Box 225936, M.S.147, Dallas, Texas, 75265, USA
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Abstract

Silicon-on-Insulator structures will be an important technological advance used in future VLSI, VHSIC and threedimensional integrated circuits. The most mature SOI technology other than silicon-on-sapphire is SIMOX, or Separation by Implanted Oxygen. High energy oxygen ions are implanted into single crystal silicon until a stoichiometric buried silicon dioxide layer is formed. After implantation, the material is annealed at high temperature to remove implantation induced defects. The structure is completed by the growth of a thin epitaxial silicon layer. Devices and complex circuits have been successfully fabricated by several research groups. This paper reviews the development of this buried oxide SOI technology from 1973 to 1983. The five major sections discuss the advantages of SOI, the basics of buried oxide formation, the literature published between 1973 and 1983, key issues that must be solved before large scale implementation takes place and, finally, predictions of future developments.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 27: Symposium E – Ion Implantation and Ion Beam Processing of Materials , 1983 , 265
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

1. Dexter, R.J., Watelski, S.B. and Picraux, S.T., Appl. Phys. Lett., 23, 455 (1973).Google Scholar
2. Nakashima, S., Akiya, M. and Kato, K., Elec. Lett., 19, 568 (1983).Google Scholar
3. Gibbons, J.F., Johnson, W.F. and Mylroie, S.W., Projected Range Statistics, Dowden, Hutchinson and Ross, Stroudsburg, PA, 1975.Google Scholar
4. Badawi, M.H. and Anand, K.V., J. Phys. D, 10, 1931 (1977).Google Scholar
5. Izumi, K., Doken, M. and Ariyoshi, H., Elec. Lett., 14, 593 (1978).Google Scholar
6. Lindhard, J., Scharff, M. and Schiott, H.E., Matt. Fys. Medd. Dan. Vid. Selsk., 33, 1 (1963).Google Scholar
7. Das, K., Butcher, J.B. and Anand, K.V. in Chemical Vapor Deposition 1981, edited by Blocher, J.M. Jr., Vuillard, G.E. and Wahl, G., The Electrochem. Soc., Pennington, NJ, 81–7, 427 (1981).Google Scholar
8. Lam, H.W., Pinizzotto, R.F., Yuan, H.T. and Bellavance, D.W., Elec. Lett., 17, 356 (1981).Google Scholar
9. Hayashi, T., Okamoto, H. and Homma, Y., Jpn. J. Appl. Phys., 19, 1005 (1980).Google Scholar
10. Hayashi, T., Maeyama, S. and Yoshi, S., Jpn. J. Appl. Phys., 19, 1111 (1980).Google Scholar
11. Pinizzotto, R.F., Vaandrager, B.L. and Lam, H.W., Proc. Mater. Res. Soc., 7, 401 (1982).Google Scholar
12. Ohwada, K., Omura, Y. and Sano, E., 1980 International Electron Devices Meeting Technical Digest, IEEE, New York, 1980, pg.756.Google Scholar
13. Hayashi, T., Okamoto, H. and Homma, Y., Inst. Phys. Conf. Ser., 59, 533 (1981).Google Scholar
14. Kilner, J.A., Littlewood, S., Hemment, P.L.F., Maydell-Ondrusz, E. and Stephens, K.G., presented at the Sixth International Conference on Ion Beam Analysis May 1983 paper Th 7. To be published in Nucl. Instr. Meth. Phys. Res., (1984).Google Scholar
15. Irita, Y., Kunii, Y., Takahashi, M. and Kajiyama, K., Jpn. J. Appl. Phys., 20, L909 (1981).Google Scholar
16. Das, K., Butcher, J.B., Wilson, M.C., Booker, G.R., Wellby, D.W., Hemment, P.L.F. and Anand, K.V., Inst. Phys. Conf. Ser., 60, 307 (1981).Google Scholar
17. Kazmerski, L.L., Dick, J.R. and Matson, R.J., American Vacuum Society Thirtieth National Symposium, Paper ESThA01, Boston, MA, November 1983.Google Scholar
18. Maeyama, S. and Kajiyama, K., Jpn. J. Appl. Phys., 21, 744 (1982).Google Scholar
19. Izumi, K., Omura, Y., Ishikawa, M. and Sano, E., in Digest of Technical Papers, 1982 Symposium on VLSI Technology, Kanagawa, Japan.Google Scholar
19a. Also see Izumi, K., Omura, Y. and Sakai, T., J. Elec. Mat., 12, 845 (1983).Google Scholar
20. Malhi, S.D.S., Lam, H.W., Pinizzotto, R.F., Hamdi, A.H. and McDaniel, F.D., 1982 International Electron Devices Meeting Technical Digest, IEEE, New York, 1982, pg. 107.Google Scholar
21. Hamdi, A.H., McDaniel, F.D.,. Pinizzotto, R.F., Matteson, S., Lam, H.W. and Malhi, S.D.S., Appl. Phys. Lett., 41, 1143 (1982).Google Scholar
22. Hamdi, A.H., McDaniel, F.D., Pinizzotto, R.F., Matteson, S., Lam, H.W. and Malhi, S.D.S., IEEE Trans. on Nucl. Sci., NS–l30, 1722 (1983).Google Scholar
23. Kim, M.J., Brown, D.M. and Garfinkel, M., J. Appl. Phys., 54, 1991 (1983).Google Scholar
24. Nicolet, M.A., Lien, C.D., Pinizzotto, R.F. and Matteson, S., unpublished results.Google Scholar