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Rh: a Dopant with Mid-Gap Levels in InP and InGaAs and Superior Thermal Stability

Published online by Cambridge University Press:  22 February 2011

H. Scheffler ,
B. Srocka ,
A. Dadgar ,
M. Kuttler ,
A. Knecht ,
R. Heitz ,
D. Bimberg ,
J.Y. Hyeon  and
H. Schumann
H. Scheffler
Affiliation:
Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraβe 36, 10623 Berlin, Germany
B. Srocka
Affiliation:
Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraβe 36, 10623 Berlin, Germany
A. Dadgar
Affiliation:
Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraβe 36, 10623 Berlin, Germany
M. Kuttler
Affiliation:
Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraβe 36, 10623 Berlin, Germany
A. Knecht
Affiliation:
Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraβe 36, 10623 Berlin, Germany
R. Heitz
Affiliation:
Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraβe 36, 10623 Berlin, Germany
D. Bimberg
Affiliation:
Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraβe 36, 10623 Berlin, Germany
J.Y. Hyeon
Affiliation:
Institut für Anorganische und Analytische Chemie, Technische Universität Berlin, Straβe des 17. Juni 115, 10623 Berlin, Germany
H. Schumann
Affiliation:
Institut für Anorganische und Analytische Chemie, Technische Universität Berlin, Straβe des 17. Juni 115, 10623 Berlin, Germany
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Abstract

We investigate the influence of Rh-doping on electrical properties of InP and InGaAs. Deep level transient spectroscopy carried out on Rh-doped as well as undoped reference samples reveals a single Rh-related deep level in both semiconductors. While a Rh-related electron trap in InGaAs is situated at EC-0.38eV a Rh-related hole trap is found to exist in InP approximately 0.73 eV above the valence band edge. The internal reference rule for 3d transition metal deep levels is found to be valid for these 4d transition metal levels: their energy is constant across the InGaAs/InP heterojunction. We conclude these levels to be the single acceptor states of Rh substitutionally incorporated on cation sites.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 325: Symposium L – Physics and Applications of Defects in Advanced Semiconductors , 1993 , 329
Copyright
Copyright © Materials Research Society 1994

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References

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