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Role of C and Ge in the electrical activation of In implanted in Silicon

Published online by Cambridge University Press:  17 March 2011

S. Scalese ,
V. Privitera ,
M. Italia ,
A. La Magna ,
P. Alippi  and
L. Renna
S. Scalese
Affiliation:
CNR-IMM Sezione Catania, Stradale Primosole 50, 95121 Catania, Italy
V. Privitera
Affiliation:
CNR-IMM Sezione Catania, Stradale Primosole 50, 95121 Catania, Italy
M. Italia
Affiliation:
CNR-IMM Sezione Catania, Stradale Primosole 50, 95121 Catania, Italy
A. La Magna
Affiliation:
CNR-IMM Sezione Catania, Stradale Primosole 50, 95121 Catania, Italy
P. Alippi
Affiliation:
CNR-IMM Sezione Catania, Stradale Primosole 50, 95121 Catania, Italy
L. Renna
Affiliation:
ST-Microelectronics Stradale Primosole 50, 95121 Catania, Italy
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Abstract

An experimental study on In implantation in Si was performed, considering some factors that affect its electrical activation. One of the critical issues concerning In is represented by its outdiffusion, during the post-implantation annealing, a limiting factor to get active In concentration suitable for applications in microelectronics. The use of different thermal processes was evaluated, aimed to achieve a reduction of the outdiffusion and an increase of the electrical activation of In in silicon. The influence of the substrate purity on the electrical activation was shown to be of great importance: in particular, it was shown that C., present in the silicon substrate as a contaminant or as a co-implanted species, has a key-role in the electrical activation and diffusion of In in silicon. Furthermore, for the first time at our knowledge, the behaviour of In implanted in Si1−xGex layers grown by CVD on Si wafers was investigated, for Ge concentration of 0.5% and 1%. An enhancement in the electrical activation was observed with increasing the Ge content in the alloy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 810: Symposium C – Silicon Front-End Junction Formation-Physics and Technology , 2004 , C8.7
Copyright
Copyright © Materials Research Society 2004

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References

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