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The Role of Deep Defect Relaxation Dynamics in Optical Processes in Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  15 February 2011

Fan Zhong  and
J. David Cohen
Fan Zhong
Affiliation:
Department of Physics and Materials Science Institute, University of Oregon, Eugene, OR 97403.
J. David Cohen
Affiliation:
Department of Physics and Materials Science Institute, University of Oregon, Eugene, OR 97403.
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Abstract

We report results of a transient modulated photocurrent technique which allows us to observe the time evolution of the D0 sub-band under the application of optical bias light and after turning off this bias light Our measurements show that the D0 band shifts monotonically to shallower thermal energies after the bias light is applied, with roughly 10 seconds to saturation at 300K and to deeper thermal energies after removing the bias light, with a decay time of over 1000 seconds. We have also found there exists an intimate relation between the motion of the D0 band and that of the quasi Fermi level as deduced from the transient photoconductivity and therefore, in particular, to the long time photoconductivity decay. This relation is exactly reproduced by the assumption of a D0 band whose energy position evolves in time, together with a recombination process dominated by changes in the charge state of a deeper defect band under light bias.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 221
Copyright
Copyright © Materials Research Society 1995

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References

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