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The Role of Lattice Mismatch in Growth of Epitaxial Cubic Silicides on Silicon

Published online by Cambridge University Press:  26 February 2011

R. A. Hamm ,
J. M. Vandenberg ,
J. M. Gibson  and
R. T. Tung
R. A. Hamm
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. M. Vandenberg
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. M. Gibson
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
R. T. Tung
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

The lattice mismatch of single-crystal epitaxial nickel disilicide of orientation A and B on Si(111) has been measured in and out of the <111> growth direction using a four-circle X-ray diffractometer. In both directions the mismatch of the as-grown B-type film was found to be larger than for the A-type; after annealing at 800°C the mismatch of the A-type approached the value of the B-type, while the latter remained the same. This result suggests that the B-type NiSi2 film has relaxed more during growth than the A-type which can only be relieved by subsequent annealing. This difference in A- and B-type mismatch is correlated with TEM studies. The combined results provide evidence that the growth of either A or B orientation is strongly affected by the nature and density of the misfit dislocations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 37: Symposium D – Layered Structures, Epitaxy, and Interfaces , 1984 , 367
Copyright
Copyright © Materials Research Society 1985

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References

1. Tung, R. T., and Hensel, J. C., Tung, R. T., Poate, J. M. and Unterwald, F. C., in this volume.Google Scholar
2. Gibson, J. M., Tung, R. T. and Poate, J. M., Proc. Mat. Res. Soc. 14, 395 (1984).10.1557/PROC-14-395Google Scholar
3. Tung, R. T., Gibson, J. M. and Poate, J. M., Appl. Phys. Lett. 42, 888 (1983).Google Scholar
4. Phillips, J. M. and Gibson, J. M., Proc. Mat. Res. Soc. 25, 381 (1984).Google Scholar
5. Gibson, J. M., Bean, J. C., Poate, J. M. and Tung, R. T., Thin Solid Films 93, 99 (1982).Google Scholar
6. Gibson, J. M., Tung, R. T., Phillips, J. M. and Poate, J. M., Proc. Mat. Res. Soc. 25, 405 (1984).10.1557/PROC-25-405Google Scholar
7. Yasumasa, O. and Tokumaru, Y., J. Appl. Phys. 56, 314 (1984).Google Scholar
8. Lau, S. S. and Cheung, N. W., Thin Solid Films 71, 117 (1980).Google Scholar
9. Crystal Data, vol: 4: Inorganic Compounds 1967–1969, JCPDS, Third Edition.Google Scholar