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Role of Sio at TCO/P Interface on the Electrical Properties of the P/I Junction

Published online by Cambridge University Press:  21 February 2011

C. Carvalho ,
J. M. M. De Nijs ,
R. Martins  and
L. Guimarāes
C. Carvalho
Affiliation:
Faculty of Science and Technology of New University of Lisbon and Centre of Molecular Physics of Lisbon Universities (INIC), Quinta da Torre, 2825 Monte da Caparica, Portugal.
J. M. M. De Nijs
Affiliation:
Faculty of Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands.
R. Martins
Affiliation:
Faculty of Science and Technology of New University of Lisbon and Centre of Molecular Physics of Lisbon Universities (INIC), Quinta da Torre, 2825 Monte da Caparica, Portugal.
L. Guimarāes
Affiliation:
Faculty of Science and Technology of New University of Lisbon and Centre of Molecular Physics of Lisbon Universities (INIC), Quinta da Torre, 2825 Monte da Caparica, Portugal.
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Abstract

The reduction of the ITO (Indium Tin Oxide) by the deposition of an a-Si:C:H p layer by means of a Plasma Enhanced Chemical Vapour Deposition (PECVD), is considerably diminished if a thin silicon monoxide layer (estimated to be between 5–50Å thick) is applied as a diffusion barrier. The amount of reduced indium diminishes (its concentration is two times lower), while the amount of silicon oxide is less although silicon monoxide was added on purpose. The influence of the silicon monoxide layer on the electrical properties of the p/i junction is shown by its J-V characteristics (in the dark and under illumination). We can see that with a suitable silicon monoxide thickness we can improve the short circuit current density (Jsc) and the rectifying ratio.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 487
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

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