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Room Temperature Contactless Electromodulation Characterization of a Wafer-Sized InGaAs/GaAs/GaAlAs Grinsch Laser Structure

Published online by Cambridge University Press:  15 February 2011

Wojciech Krystek ,
M. Leibovitch ,
Fred H. Pollak ,
Godfrey Gumbs  and
T. Konopelski
Wojciech Krystek
Affiliation:
Physics Department and New York State Center for Advanced Technology in Ultrafast Photonic Materials and Applications;, Brooklyn College of the City University of New York;, Brooklyn, NY 11210; WOKBC@CUNYVM.CUNY.EDU
M. Leibovitch
Affiliation:
Physics Department and New York State Center for Advanced Technology in Ultrafast Photonic Materials and Applications;, Brooklyn College of the City University of New York;, Brooklyn, NY 11210; WOKBC@CUNYVM.CUNY.EDU
Fred H. Pollak
Affiliation:
Physics Department and New York State Center for Advanced Technology in Ultrafast Photonic Materials and Applications;, Brooklyn College of the City University of New York;, Brooklyn, NY 11210; WOKBC@CUNYVM.CUNY.EDU
Godfrey Gumbs
Affiliation:
Department of Physics and Astronomy;Hunter College of the City University of New York:, New York, NY 10021
T. Konopelski
Affiliation:
Semiconductor Laser International, Vestal, NY 13850
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Abstract

Using contactless electroreflectance at 300K we have characterized the complete potential profile of a pseudomorphic 0.98 μm InGaAs/GaAs/GaAlAs graded index of refraction separate confinement heterostructure laser fabricated by molecular beam epitaxy. Signals were detected from all three relevant portions of the sample. Comparison of the observed transitions from the InGaAs single quantum well (SQW) section with an envelope function calculation (including the effects of strain) made it possible to evaluate the In composition and width of SQW. These values were in good agreement with the intended parameters. The energy of 11H, the fundamental conduction to heavy-hole level (which is closely related to the lasing frequency) can easily be determined to less than ± 1 nm at 300K. From the period of the observed Franz-Keldysh oscillations from the graded GaAlAs region it was possible to directly evaluate the built-in electric field in the structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 406: Symposium L – Diagnostic Techniques for Semiconductor Materials Processing , 1995 , 241
Copyright
Copyright © Materials Research Society 1996

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