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Room Temperature Oxidation of Silicon Catalyzed by Cu3Si

Published online by Cambridge University Press:  25 February 2011

C. S. Liu  and
L. J. Chen
C. S. Liu
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University Hsinchu, Taiwan, Republic of China
L. J. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University Hsinchu, Taiwan, Republic of China
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Abstract

The dependence of room temperature oxidation of silicon catalyzed by Cu3Si on silicide thickness, silicide grain size and the substrate orientation has been investigated by transmission electron microscopy and x—ray diffractometry.

The extent of oxidation was found to depend critically on the thickness of starting Cu3Si film. The oxidation was found to be more restricted on (lll)Si than that of (001)Si samples. The thickness of SiO2 layer was found to decrease with the average grain size of the starting Cu3Si layer. HRTEM revealed that the oxidation is initiated at the grain boundaries. Oxide film as thick as 4.5 μm was grown at room temperature over a period of two weeks in (001) samples. The growth of thick oxide film was achieved by minimizing the grain size of Cu3Si through a reaction between Cu and an intermediate amorphous silicon layer at 200 °C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 195
Copyright
Copyright © Materials Research Society 1994

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References

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